公开(公告)号：US11686571B2

公开(公告)日：2023-06-27

申请号：US17465753

申请日：2021-09-02

Applicant: Applied Materials Israel Ltd.

Inventor： Roman Kris ,  Ilan Ben-Harush ,  Rafael Bistritzer ,  Vadim Vereschagin ,  Elad Sommer ,  Grigory Klebanov ,  Arundeepth Thamarassery ,  Jannelle Anna Geva ,  Gal Daniel Gutterman ,  Einat Frishman ,  Sahar Levin

IPC: G01B11/24 ,  G01B9/02 ,  G06T7/00

CPC classification number: G01B9/02043 ,  G01B9/02084 ,  G01B11/24 ,  G06T7/001 ,  G06T2207/30148

Abstract: There is provided a system and method of a method of detecting a local shape deviation of a structural element in a semiconductor specimen, comprising: obtaining an image comprising an image representation of the structural element; extracting, from the image, an actual contour of the image representation; estimating a reference contour of the image representation indicative of a standard shape of the structural element, wherein the reference contour is estimated based on a Fourier descriptor representative of the reference contour, the Fourier descriptor being estimated using an optimization method based on a loss function specifically selected to be insensitive to local shape deviation of the actual contour; and performing one or more measurements representative of one or more differences between the actual contour and the reference contour, the measurements indicative of whether a local shape deviation is present in the structural element.