公开(公告)号：US20240191101A1

公开(公告)日：2024-06-13

申请号：US18556230

申请日：2022-05-10

Applicant: Araca Inc.

Inventor： Ara Philipossian ,  Yasa Sampumo ,  Jason A. Keleher ,  Katherine Wortman-Otto ,  Abigail Linhart ,  Kiana A. Cahue

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: A method for polishing a silicon carbide surface. The silicon carbide surface is polished with a particulate abrasive while exposed to a composition of water, an oxidizing agent and an electrophile. The method provides material removal rates (MRR) that are competitive with, or superior to, conventional methods without utilizing harsh chemicals.