公开(公告)号：US20240191101A1

公开(公告)日：2024-06-13

申请号：US18556230

申请日：2022-05-10

Applicant: Araca Inc.

Inventor： Ara Philipossian ,  Yasa Sampumo ,  Jason A. Keleher ,  Katherine Wortman-Otto ,  Abigail Linhart ,  Kiana A. Cahue

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: A method for polishing a silicon carbide surface. The silicon carbide surface is polished with a particulate abrasive while exposed to a composition of water, an oxidizing agent and an electrophile. The method provides material removal rates (MRR) that are competitive with, or superior to, conventional methods without utilizing harsh chemicals.

公开(公告)号：US20240379371A1

公开(公告)日：2024-11-14

申请号：US18276355

申请日：2022-02-07

Applicant: ARACA, INC.

Inventor： Ara PHILIPOSSIAN ,  Yasa SAMPURNO ,  Jason A. KELEHER ,  Katherine WORTMAN-OTTO ,  Abigail LINHART ,  Kiana A. CAHUE

IPC: H01L21/306 ,  B24B57/02

Abstract: A Chemical Mechanical Planarization (CMP) system, apparatus, and method comprising providing a source of CMP slurry; modifying the source of CMP slurry to form a modified CMP slurry by directing a source of at least one of mechanical or electromagnetic wave energy at the source of CMP slurry; applying a flow of the modified CMP slurry to a wafer polishing apparatus at which a substrate is positioned; and performing a polishing operation on the substrate.

公开(公告)号：US20250101261A1

公开(公告)日：2025-03-27

申请号：US18832677

申请日：2022-08-12

Applicant: ARACA, INC.

Inventor： Jason A. KELEHER ,  Kiana A. CAHUE ,  Yasa SAMPURNO ,  Fred C. REDEKER ,  Ara PHILIPOSSIAN

IPC: C09G1/02 ,  H01L21/306

Abstract: A Chemical Mechanical Planarization (CMP) system, apparatus, and method comprising providing a source of CMP slurry; modifying the source of CMP slurry to form a modified CMP slurry by directing a source of at least one of mechanical or electromagnetic wave energy at the source of CMP slurry; applying a flow of the modified CMP slurry to a wafer polishing apparatus at which a substrate is positioned; and performing a polishing operation on the substrate.