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公开(公告)号：US08023247B2
公开(公告)日：2011-09-20
申请号：US12331813
申请日：2008-12-10
IPC分类号： H01L21/683 , C23C16/42
CPC分类号： H01L21/6831 , H02N13/00
摘要： The present invention is directed to an electrostatic chuck (ESC) with a compliant layer formed from TT-Kote® and a method of forming a clamping plate for an ESC. The ESC comprises a compliant layer having a low friction surface for reducing or eliminating particulates generated from thermal expansion. The method comprises forming a clamping member for a substrate comprising a ceramic material and a ceramic surface, and coating the ceramic surface with a compliant layer comprising an organic silicide or TT-Kote®.
摘要翻译： 本发明涉及一种具有由TT-Kote制成的顺应层的静电卡盘（ESC）和形成ESC用夹板的方法。 ESC包括具有低摩擦表面的柔顺层，用于减少或消除由热膨胀产生的微粒。 该方法包括形成用于包括陶瓷材料和陶瓷表面的基底的夹紧构件，并且用包含有机硅化物或TT-Kote的柔性层涂覆陶瓷表面。
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公开(公告)号：US20100142113A1
公开(公告)日：2010-06-10
申请号：US12331619
申请日：2008-12-10
IPC分类号： H01L21/683
CPC分类号： H01L21/6833 , H01L21/6831
摘要： One embodiment of the present invention relates to a method for declamping a semiconductor wafer that is electrically adhered to a surface of an electrostatic chuck by a clamping voltage. In this method, the clamping voltage is deactivated. For a time following the deactivation, a first region of the wafer is lifted an first distance from the surface of the electrostatic chuck while a second region of the wafer remains adhered to the surface of the electrostatic chuck. A predetermined condition is monitored during the time. The second region is lifted from the surface of the electrostatic chuck when the predetermined condition is met.
摘要翻译： 本发明的一个实施例涉及一种用于通过钳位电压电粘合到静电卡盘表面上的半导体晶片的方法。 在这种方法中，钳位电压被去激活。 在停用之后的一段时间，晶片的第一区域从静电卡盘的表面提升第一距离，而晶片的第二区域保持粘附到静电卡盘的表面。 在此期间监视预定条件。 当满足预定条件时，第二区域从静电卡盘的表面提升。
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公开(公告)号：US08270142B2
公开(公告)日：2012-09-18
申请号：US12331619
申请日：2008-12-10
IPC分类号： H01L21/683
CPC分类号： H01L21/6833 , H01L21/6831
摘要： One embodiment of the present invention relates to a method for declamping a semiconductor wafer that is electrically adhered to a surface of an electrostatic chuck by a clamping voltage. In this method, the clamping voltage is deactivated. For a time following the deactivation, a first region of the wafer is lifted an first distance from the surface of the electrostatic chuck while a second region of the wafer remains adhered to the surface of the electrostatic chuck. A predetermined condition is monitored during the time. The second region is lifted from the surface of the electrostatic chuck when the predetermined condition is met.
摘要翻译： 本发明的一个实施例涉及一种用于通过钳位电压电粘合到静电卡盘表面上的半导体晶片的方法。 在这种方法中，钳位电压被去激活。 在停用之后的一段时间，晶片的第一区域从静电卡盘的表面提升第一距离，而晶片的第二区域保持粘附到静电卡盘的表面。 在此期间监视预定条件。 当满足预定条件时，第二区域从静电卡盘的表面提升。
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公开(公告)号：US20100142114A1
公开(公告)日：2010-06-10
申请号：US12331813
申请日：2008-12-10
IPC分类号： H01L21/683
CPC分类号： H01L21/6831 , H02N13/00
摘要： The present invention is directed to an electrostatic chuck (ESC) with a compliant layer formed from TT-Kote® and a method of forming a clamping plate for an ESC. The ESC comprises a compliant layer having a low friction surface for reducing or eliminating particulates generated from thermal expansion. The method comprises forming a clamping member for a substrate comprising a ceramic material and a ceramic surface, and coating the ceramic surface with a compliant layer comprising an organic silicide or TT-Kote®.
摘要翻译： 本发明涉及一种具有由TT-Kote制成的顺应层的静电卡盘（ESC）和形成ESC用夹板的方法。 ESC包括具有低摩擦表面的柔顺层，用于减少或消除由热膨胀产生的微粒。 该方法包括形成用于包括陶瓷材料和陶瓷表面的基底的夹紧构件，并且用包含有机硅化物或TT-Kote的柔性层涂覆陶瓷表面。
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公开(公告)号：US06515290B1
公开(公告)日：2003-02-04
申请号：US09654958
申请日：2000-09-05
申请人： Richard J. Rzeszut , James P. Quill
发明人： Richard J. Rzeszut , James P. Quill
IPC分类号： H01J2700
CPC分类号： H01J37/3171 , H01J37/08
摘要： A gas delivery system for an ion implantation system comprises a gas source at a first voltage potential and an ion source at a second voltage potential which is larger than the first voltage potential. The system further comprises an electrically insulative connector coupled between the gas source and the ion source. The present invention also comprises a method of delivering gas to an ion implantation system which comprises maintaining a voltage potential of a source gas at a storage location at a first voltage potential that is less than a second voltage potential at an ion source of the ion implantation system and delivering the source gas from the storage location to the ion source.
摘要翻译： 用于离子注入系统的气体输送系统包括处于第一电压电势的气体源和大于第一电压电位的第二电压电位的离子源。 该系统还包括耦合在气体源和离子源之间的电绝缘连接器。 本发明还包括将气体输送到离子注入系统的方法，该方法包括将离子注入离子源处的小于第二电压电位的第一电压电位的源气体的电位电位保持在存储位置 将源气体从储存位置输送到离子源。
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