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    METHOD OF OPERATING AN ION BEAM SOURCE, ION BEAM SOURCE AND COMPUTER PROGRAM
    3.
    发明公开
    METHOD OF OPERATING AN ION BEAM SOURCE, ION BEAM SOURCE AND COMPUTER PROGRAM 审中-公开

    公开(公告)号：US20240266139A1

    公开(公告)日：2024-08-08

    申请号：US18431498

    申请日：2024-02-02

    Applicant: Carl Zeiss Microscopy GmbH

    Inventor： Ramu Pradip

    IPC: H01J37/08 ,  H01J37/244

    CPC classification number: H01J37/08 ,  H01J37/244 ,  H01J2237/24585 ,  H01J2237/24592

    Abstract: Operating an ion beam source comprises operating the ion beam source in a beam generation mode and operating the ion beam source in a decontamination mode. Operating in beam generation mode includes generating an ion beam from ions emitted from a tip. Operating in decontamination mode includes supplying power to a heating wire to raise the temperature of the heating wire to a decontamination temperature, measuring a change over time of a physical property indicating a temperature of the heating wire while the power is supplied to the heating wire, and displaying an indication based on the measured change over time of the physical property and/or storing a change value based on the measure change over time of the physical property. The ion beam source comprises the heating wire, a metal reservoir mechanically connected to the heating wire, and the tip mechanically connected to the metal reservoir.

    Etching apparatus and etching method
    4.
    发明授权
    Etching apparatus and etching method 有权

    公开(公告)号：US12020892B2

    公开(公告)日：2024-06-25

    申请号：US16805030

    申请日：2020-02-28

    Applicant: KIOXIA CORPORATION

    Inventor： Yusuke Goki

    IPC: H01J37/08 ,  H01J37/305 ,  H01L21/3065

    CPC classification number: H01J37/08 ,  H01J37/3053 ,  H01L21/3065 ,  H01J2237/3151

    Abstract: An etching apparatus includes a substrate holder configured to hold a substrate, a first ion source that generates first ions and irradiates the substrate with the first ions such that the first ions are incident on the substrate in the substrate holder at a first incident angle, and a second ion source that generates second ions and irradiates the substrate with the second ions such that the second ions are incident on the substrate at a second incident angle different from the first incident angle. A controller is provided that controls at least one of the first incident angle and the second incident angle by moving at least one of the first ion source and the second ion source.

    Common substrate and shadow ring lift apparatus
    7.
    发明授权
    Common substrate and shadow ring lift apparatus 有权

    公开(公告)号：US11881375B2

    公开(公告)日：2024-01-23

    申请号：US17232078

    申请日：2021-04-15

    Applicant: Applied Materials, Inc.

    Inventor： Abhishek Chowdhury ,  Nataraj Bhaskar Rao ,  Siqing Lu ,  Ravikumar Patil

    IPC: H01J37/08 ,  H01J37/32 ,  H01J37/24 ,  H01J37/248

    CPC classification number: H01J37/08 ,  H01J37/248 ,  H01J37/32642 ,  H01J2237/24564 ,  H01J2237/3328

    Abstract: Embodiments of a lift apparatus for use in a substrate processing chamber are provided herein. In some embodiments, a lift apparatus includes: a plurality of first lift pin assemblies configured to raise or lower a substrate having a given diameter when disposed thereon, wherein each of the first lift pin assemblies includes a first lift pin disposed on a first bellows assembly; a plurality of second lift pin assemblies arranged in a circle having a diameter greater than the given diameter and configured to raise or lower an annular chamber component, wherein each of the second lift pin assemblies includes a second lift pin disposed on a second bellows assembly; an actuator; and a lift assembly coupled to the actuator and configured to raise or lower each of the first lift pin assemblies and the second lift pin assemblies by movement of the actuator.

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