公开(公告)号：US06284576B1

公开(公告)日：2001-09-04

申请号：US09196229

申请日：1998-11-20

申请人： Atsushi Ban ,  Hisataka Suzuki ,  Masaya Okamoto

发明人： Atsushi Ban ,  Hisataka Suzuki ,  Masaya Okamoto

IPC分类号： H01L2100

CPC分类号： H01L29/66765

摘要： A thin-film transistor of the reversed stagger type is provided with a gate electrode, first and second gate insulating films, a semiconductor layer, separated contact layers, and source electrodes and drain electrodes, all of which are stacked on a substrate. Upon manufacturing the thin-film transistor of this type, a gap section is pattered in a single contact-material layer. In this case, the contact-material layer is patterned by a dry etching with etching gases including HCl+SF6 or CF4+O2+HCl by the use of the source electrode and drain electrode as direct masks. Upon patterning a gap section in the contact-material layer between the source electrode and the drain electrode, no dedicated resist pattern is required; therefore, it is possible to reduce the number of the processes as compared with conventional manufacturing methods. Consequently, it becomes possible to reduce the production cost of thin-film transistors and also to improve the yield of desired products.

摘要翻译： 反向交错型薄膜晶体管设置有栅电极，第一和第二栅极绝缘膜，半导体层，分离的接触层以及源极和漏极，所有这些都堆叠在基板上。 在制造这种类型的薄膜晶体管时，在单个接触材料层中将间隙部分图案化。 在这种情况下，通过使用源电极和漏电极作为直接掩模的蚀刻气体，包括HCl + SF6或CF4 + O2 + HCl的干法蚀刻来对接触材料层进行构图。 在图案化源电极和漏电极之间的接触材料层中的间隙部分时，不需要专用抗蚀剂图案; 因此，与传统的制造方法相比，可以减少处理次数。 因此，可以降低薄膜晶体管的生产成本，并且还可以提高所需产品的产量。

公开(公告)号：US5953583A

公开(公告)日：1999-09-14

申请号：US887136

申请日：1997-07-02

申请人： Atsushi Ban ,  Hisataka Suzuki ,  Masaya Okamoto

发明人： Atsushi Ban ,  Hisataka Suzuki ,  Masaya Okamoto

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/336 ,  H01L29/786 ,  H01L21/306 ,  H01L21/84

CPC分类号： H01L29/66765

摘要： A thin-film transistor of the reversed stagger type is provided with a gate electrode, first and second gate insulating films, a semiconductor layer, separated contact layers, and source electrodes and drain electrodes, all of which are stacked on a substrate. Upon manufacturing the thin-film transistor of this type, a gap section is pattered in a single contact-material layer. In this case, the contact-material layer is patterned by carrying out etching by the use of the source electrode and drain electrode as direct masks or by the use of a resist pattern that was used for forming the respective electrodes. Upon patterning a gap section in the contact-material layer between the source electrode and the drain electrode, no dedicated resist pattern is required; therefore, it is possible to reduce the number of the processes as compared with conventional manufacturing methods. Consequently, it becomes possible to reduce the production cost of thin-film transistors and also to improve the yield of desired products.

摘要翻译： 反向交错型薄膜晶体管设置有栅电极，第一和第二栅极绝缘膜，半导体层，分离的接触层以及源极和漏极，所有这些都堆叠在基板上。 在制造这种类型的薄膜晶体管时，在单个接触材料层中将间隙部分图案化。 在这种情况下，通过使用源电极和漏电极作为直接掩模或通过使用用于形成各个电极的抗蚀剂图案进行蚀刻来对接触材料层进行图案化。 在图案化源电极和漏电极之间的接触材料层中的间隙部分时，不需要专用抗蚀剂图案; 因此，与传统的制造方法相比，可以减少处理次数。 因此，可以降低薄膜晶体管的生产成本，并且还可以提高所需产品的产量。

公开(公告)号：US5579141A

公开(公告)日：1996-11-26

申请号：US278951

申请日：1994-07-22

申请人： Hisataka Suzuki ,  Mitsuaki Hirata ,  Shigeaki Mizushima ,  Noriko Watanabe ,  Hiroko Iwagoe ,  Seiji Makino

发明人： Hisataka Suzuki ,  Mitsuaki Hirata ,  Shigeaki Mizushima ,  Noriko Watanabe ,  Hiroko Iwagoe ,  Seiji Makino

IPC分类号： G02F1/1337

CPC分类号： G02F1/133788 ,  G02F2001/133757 ,  G02F2001/133761

摘要： The liquid crystal display apparatus of the invention includes a first substrate and a second substrate disposed so as to face each other, a liquid crystal layer sandwiched between the first substrate and the second substrate, a first alignment film formed between the liquid crystal layer and theist substrate, and a second alignment film formed between the liquid crystal layer and the second substrate. In the liquid crystal display apparatus, the liquid crystal layer includes a plurality of liquid crystal layer regions having aligning conditions which are different from each other, the plurality of liquid crystal layer regions including a first liquid crystal layer region and a second liquid crystal layer region, and wherein the orientation direction in a substrate plane of liquid crystal molecules in the vicinity of the center of the first liquid crystal layer region is different from the orientation direction in the substrate plane of liquid crystal molecules in the vicinity of the center of the second liquid crystal layer region, substantially by 90.degree..

摘要翻译： 本发明的液晶显示装置包括：第一基板和彼此相对配置的第二基板;夹在第一基板和第二基板之间的液晶层，形成在液晶层和第一基板之间的第一取向膜 基板和形成在液晶层和第二基板之间的第二取向膜。 在液晶显示装置中，液晶层包括具有彼此不同的取向条件的多个液晶层区域，多个液晶层区域包括第一液晶层区域和第二液晶层区域 并且其中在第一液晶层区域的中心附近的液晶分子的衬底平面中的取向方向与第二液晶层区域的中心附近的液晶分子的衬底平面中的取向方向不同 液晶层区域，基本上为90°。