公开(公告)号：US20040113089A1

公开(公告)日：2004-06-17

申请号：US10248074

申请日：2002-12-16

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： Alan C. Janos ,  Betty Zhang

IPC: G01J005/02

CPC classification number: G01J1/429 ,  G11C16/18

Abstract: An apparatus and process for measuring light intensities includes the use of a probe. The probe is configured for monitoring a wavelength range from about 180 nanometers to about 270 nanometers (nm). The probe comprises a reflective and diffusive layer adapted for collecting light; a waveguide having one end in optical communication with the reflective and diffusive layer, wherein the waveguide has greater than about 50 percent transmission at wavelengths of about 180 nm to about 270 nm; a sensor probe in optical communication with the other end of the waveguide; and a filter intermediate to the waveguide and the sensor, wherein the filter is adapted to remove wavelengths greater than about 270 nm and has a percent transmission at wavelengths of about 180 nm to about 270 nm greater than about 50 percent.

Abstract translation: 用于测量光强度的装置和方法包括使用探针。 该探针配置用于监测约180纳米至约270纳米（nm）的波长范围。 探针包括适于收集光的反射和漫射层; 波导，其一端与反射和扩散层光学连通，其中波导在约180nm至约270nm的波长处具有大于约50％的透射率; 与波导的另一端光连通的传感器探头; 以及位于波导和传感器之间的滤波器，其中滤波器适于去除大于约270nm的波长并且具有大于约50％的约180nm至约270nm的波长的百分比透射率。

公开(公告)号：US20030015669A1

公开(公告)日：2003-01-23

申请号：US09905058

申请日：2001-07-12

Applicant: Axcelis Technologies, Inc.

Inventor： Alan C. Janos ,  Daniel B. Richardson

IPC: H01J061/00

CPC classification number: G03F7/70025 ,  G03F7/70575 ,  H01L21/67115 ,  H01L21/67126

Abstract: A radiation source constructed in accordance with the invention is particularly suited for use in processing semiconductor wafers. An exemplary embodiment of the invention includes a base electrode having a two dimensional surface bounding one side of a radiation emitting region. An ionizable, excimer gas is present in the radiation emitting region. The excimer gas, when energized, emits radiation in the UV and/or VUV wavelengths. A two dimensional dielectric radiation transmissive layer bounds an opposite side of the radiation emitting region and transmits radiation to a wafer treatment region. Disposed between the dielectric radiation transmissive layer and a protective radiation transmissive window is a two dimensional matrix or screen electrode defining a plane generally parallel to the two dimensional surface of the base electrode region. A power supply coupled to the base and matrix electrodes to energize the electrodes and the eximer gas causing emission of UV and/or VUV radiation. The range of wavelengths transmitted to the wafer treatment region can be nulltunednull by using a filter disposed adjacent to the protective window which functions to block transmission of selected wavelengths of emitted radiation.

Abstract translation: 根据本发明构造的辐射源特别适用于处理半导体晶片。 本发明的示例性实施例包括具有限定辐射发射区域的一侧的二维表面的基极。 可辐射的准分子气体存在于辐射发射区域中。 受激准分子气体在通电时会以UV和/或VUV波长发射辐射。 二维电介质辐射透射层限定辐射发射区的相对侧，并将辐射传输到晶片处理区。 设置在电介质辐射透射层和保护性辐射透射窗之间的是二维矩阵或屏幕电极，其限定大致平行于基极区域的二维表面的平面。 耦合到基极和矩阵电极的电源，以激励电极和致密气体，引起UV和/或VUV辐射的发射。 传输到晶片处理区域的波长范围可以通过使用与保护窗相邻设置的滤波器来“调谐”，该滤波器用于阻止所发射的辐射的所选波长的传输。