USE OF MnAlGe IN MAGNETIC STORAGE DEVICES
    1.
    发明授权
    USE OF MnAlGe IN MAGNETIC STORAGE DEVICES 失效
    MnAlGe在磁存储器件中的应用

    公开(公告)号:US3676867A

    公开(公告)日:1972-07-11

    申请号:US3676867D

    申请日:1970-12-07

    CPC classification number: C22C28/00 C23C14/14 G11B11/10586 H01F10/12

    Abstract: It has been found that vapor deposition of the ferromagnetic material MnAlGe onto a substrate will give a thin film having the easy direction of magnetization normal to the substrate. This unusual capability does not depend on epitaxial growth and, indeed, the preferred embodiment calls for the use of an amorphous substrate. This inherent property of MnAlGe makes it useful for the class of magnetic devices operating on the principle of the reversal of the direction of magnetization of isolated regions for the purpose of information storage.

    Abstract translation: 已经发现,将铁磁材料MnAlGe气相沉积到衬底上将产生具有与衬底垂直的易磁化方向的薄膜。 这种不寻常的能力不取决于外延生长,实际上,优选实施例要求使用非晶衬底。 MnAlGe的这种固有特性使其对于以隔离区域的磁化方向为了信息存储的方向反转为原则而工作的磁性器件类别是有用的。

Patent Agency Ranking