公开(公告)号：US3913212A

公开(公告)日：1975-10-21

申请号：US38202173

申请日：1973-07-23

Applicant: BELL TELEPHONE LABOR INC

Inventor： BACHMANN KLAUS JURGEN ,  BUEHLER ERNEST ,  SHAY JOSEPH LEO ,  WERNICK JACK HARRY

IPC: H01L31/10 ,  C30B19/04 ,  C30B19/06 ,  H01L21/00 ,  H01L21/368 ,  H01L29/861 ,  H01L31/032 ,  H01L31/109 ,  H01L33/00 ,  H01L33/30 ,  B01J17/00

CPC classification number: H01L33/30 ,  C30B19/04 ,  C30B19/061 ,  C30B29/10 ,  C30B29/44 ,  H01L21/00 ,  H01L31/032 ,  H01L31/109 ,  H01L33/005 ,  H01L33/305 ,  Y10S117/90 ,  Y10S438/93

Abstract: There are disclosed diodes for detection and diodes for emission of near-infrared radiation. Such a diode employs an epitaxial layer of n-type cadmium tin phosphide grown on a p-type InP substrate, which is the light-transmitting window of the device. Also diclosed is a tipping technique of epitaxial growth in which the conditions of the substrate crystal and the tin-rich melt are controlled to obtain high quality heterojunctions. A mixture of tin, phosphorus, and cadmium is prepared in a separate saturation procedure to minimize substrate degradation during epitaxial growth. The indium phosphide substrates are high quality and ptype with predominantly cadmium or zinc doping. In some diodes the CdSnP2 epitaxial layers contain some indium traceable to dissolution of the indium phosphide substrate by the tin solution prior to nucleation and growth of the epitaxial layer. Later diodes grown from solutions containing controlled amounts of indium intentionally added to the presaturated melt, efficiently emitted infrared light near 1.0 Mu .

Abstract translation: 公开了用于检测的二极管和用于发射近红外辐射的二极管。 这种二极管采用在作为器件的透光窗口的p型InP衬底上生长的n型镉锡磷化物的外延层。 另外还是外延生长的倾覆技术，其中基体晶体和富含锡的熔体的条件被控制以获得高质量的异质结。 在独立的饱和程序中制备锡，磷和镉的混合物，以使外延生长过程中的底物降解最小化。 磷化铟基底是高质量的，p型主要是镉或锌掺杂。

公开(公告)号：US3676867A

公开(公告)日：1972-07-11

申请号：US3676867D

申请日：1970-12-07

Applicant: BELL TELEPHONE LABOR INC

Inventor： BACON DONALD DINGLEY ,  NESBITT ETHAN ALLEN ,  SHERWOOD RICHARD CURRY ,  WERNICK JACK HARRY

IPC: C22C28/00 ,  C23C14/14 ,  G11B11/105 ,  H01F10/12 ,  G11C11/14 ,  G11C11/42

CPC classification number: C22C28/00 ,  C23C14/14 ,  G11B11/10586 ,  H01F10/12

Abstract: It has been found that vapor deposition of the ferromagnetic material MnAlGe onto a substrate will give a thin film having the easy direction of magnetization normal to the substrate. This unusual capability does not depend on epitaxial growth and, indeed, the preferred embodiment calls for the use of an amorphous substrate. This inherent property of MnAlGe makes it useful for the class of magnetic devices operating on the principle of the reversal of the direction of magnetization of isolated regions for the purpose of information storage.

Abstract translation: 已经发现，将铁磁材料MnAlGe气相沉积到衬底上将产生具有与衬底垂直的易磁化方向的薄膜。 这种不寻常的能力不取决于外延生长，实际上，优选实施例要求使用非晶衬底。 MnAlGe的这种固有特性使其对于以隔离区域的磁化方向为了信息存储的方向反转为原则而工作的磁性器件类别是有用的。

公开(公告)号：US3912611A

公开(公告)日：1975-10-14

申请号：US33976873

申请日：1973-03-12

Applicant: BELL TELEPHONE LABOR INC

Inventor： ROYER WILLIAM ANTHONY ,  TESTARDI LOUIS RICHARD ,  WERNICK JACK HARRY

IPC: C22C27/00 ,  C22C27/04 ,  C23C14/14 ,  C23C5/00 ,  B44C1/18

CPC classification number: C23C14/14 ,  B26B21/60 ,  C22C27/04 ,  C23C14/3414 ,  F16C33/121 ,  Y10S505/816 ,  Y10T428/261 ,  Y10T428/266 ,  Y10T428/31678

Abstract: Film materials produced by low temperature deposition show a variety of device-significant properties. Film compositions center about the nominal formulae Mo5Ru3 and W3Ru2. Films, conveniently deposited by sputtering, show high values of hardness, corrosion resistance, and reflectivity. Resistivities, as well as temperature coefficient of resistance, may be varied over a broad range dependent upon deposition temperature.

Abstract translation: 通过低温沉积生产的薄膜材料显示出各种器件的显着特性。 电影作品集中在名义公式Mo5Ru3和W3Ru2上。 通过溅射方便地沉积的膜显示出高的硬度值，耐腐蚀性和反射率。 电阻率以及电阻温度系数可以根据沉积温度在宽范围内变化。

公开(公告)号：US3865557A

公开(公告)日：1975-02-11

申请号：US41414973

申请日：1973-11-09

Applicant: BELL TELEPHONE LABOR INC

Inventor： ANDRES KLAUS ,  BUCHER ERNEST ,  WERNICK JACK HARRY

IPC: C09K5/08 ,  G01K7/38 ,  H01L39/12 ,  B32B15/00 ,  C22C31/00

CPC classification number: F25B21/00 ,  C09K5/08 ,  G01K7/38 ,  H01L39/12 ,  Y02B30/66 ,  Y02P20/124 ,  Y10S428/926 ,  Y10S505/847 ,  Y10T428/12431 ,  Y10T428/12681 ,  Y10T428/12889

Abstract: The metallic compound AuIn2 is useful as a thermometer or a refrigerant in the temperature region below 0.1*K. Its utility extends to the submillidegree Kelvin region. The thermometric parameter is its static nuclear magnetic susceptibility, which is relatively large. The refrigerating technique of adiabatic demagnetization is also applicable to the large nuclear magnetic moments of this material. The product of temperature and spinlattice relaxation time of AuIn2 is approximately constant in this temperature range and equal to 0.09 seconds-*K giving approximately 1 second relaxation time at 0.1*K and 1 minute at 1 millidegree K.

Abstract translation: 金属化合物AuIn2可用作温度计或低于0.1°K的温度区域的制冷剂。其用途扩展到亚历山大开尔文地区。 温度参数是其静态核磁化率，相对较大。 绝热消磁的制冷技术也适用于这种材料的大型核磁矩。 AuIn2的温度和自旋晶格弛豫时间的乘积在该温度范围内近似恒定，等于0.09秒-KK，在0.1℃下产生约1秒的弛豫时间，在1毫摩尔K下产生1分钟。

公开(公告)号：US3922553A

公开(公告)日：1975-11-25

申请号：US49917274

申请日：1974-08-21

Applicant: BELL TELEPHONE LABOR INC

Inventor： BACHMANN KLAUS JURGEN ,  BUEHLER ERNEST ,  SHAY JOSEPH LEO ,  WERNICK JACK HARRY

IPC: C30B19/04 ,  C30B19/06 ,  H01L31/032 ,  H01L31/109 ,  H01L33/00 ,  H01L29/161 ,  G01T1/22

CPC classification number: H01L33/005 ,  C30B19/04 ,  C30B19/061 ,  C30B29/10 ,  C30B29/44 ,  H01L31/032 ,  H01L31/109 ,  Y10S148/059 ,  Y10S148/072

Abstract: There are disclosed diodes for detection and diodes for emission of near-infrared radiation. Such a diode employs an epitaxial layer of n-type cadmium tin phosphide grown on a p-type InP substrate, which is the light-transmitting window of the device. Also disclosed is a tipping technique of epitaxial growth in which the conditions of the substrate crystal and the tin-rich melt are controlled to obtain high quality heterojunctions. A mixture of tin, phosphorus, and cadmium is prepared in a separate saturation procedure to minimize substrate degradation during epitaxial growth. The indium phosphide substrates are high quality and p-type with predominantly cadmium or zinc doping. In some diodes the CdSnP2 epitaxial layers contain some indium traceable to dissolution of the indium phosphide substrate by the tin solution prior to nucleation and growth of the epitaxial layer. Later diodes grown from solutions containing controlled amounts of indium intentionally added to the presaturated melt, efficiently emitted infrared light near 1.0 Mu .

Abstract translation: 公开了用于检测的二极管和用于发射近红外辐射的二极管。 这种二极管采用在作为器件的透光窗口的p型InP衬底上生长的n型镉锡磷化物的外延层。 还公开了外延生长的倾翻技术，其中基体晶体和富含锡的熔体的条件被控制以获得高质量的异质结。 在独立的饱和程序中制备锡，磷和镉的混合物，以使外延生长过程中的底物降解最小化。 磷化铟基底是高质量的，p型主要是镉或锌掺杂。

公开(公告)号：US3875451A

公开(公告)日：1975-04-01

申请号：US42345373

申请日：1973-12-10

Applicant: BELL TELEPHONE LABOR INC

Inventor： BACHMANN KLAUS JURGEN ,  BUEHLER ERNEST ,  SHAY JOSEPH LEO ,  WERNICK JACK HARRY

IPC: C30B19/04 ,  C30B19/06 ,  H01L21/208 ,  H01L31/103 ,  H01L33/00 ,  H01L33/30 ,  H04B10/43 ,  H01J1/62 ,  H01J63/04

CPC classification number: H01L33/30 ,  C30B19/04 ,  C30B19/061 ,  C30B29/10 ,  C30B29/44 ,  H01L21/02392 ,  H01L21/02543 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/02625 ,  H01L21/02628 ,  H01L21/02658 ,  H01L31/1035 ,  H01L33/0008 ,  H01L33/005 ,  H01L33/305 ,  H04B10/43

Abstract: There are disclosed indium phosphide p-n junction diodes providing efficient room temperature electroluminescence at wavelengths between 0.98 and 1.10 micrometers and comprising at least an n-type portion containing substantial quantities of cadmium and tin but forming a minor constituent in the n-type portion. The p-type portion is typically zinc or cadmium doped single crystal indium phosphide used as the substrate in the fabrication process. The n-type portion is epitaxially deposited by liquid phase epitaxial from tin solution. The resulting diode emits efficiently at the 1.05 micrometer wavelength of low loss glass fibers and also provides a better match to the absorption wavelength of infrared-to-visible frequency-converting phosphor than does a gallium arsenide laser or electroluminescence diode. External efficiencies exceeding 1 percent have been obtained.

Abstract translation: 公开了磷化铟p-n结二极管，其在0.98至1.10微米之间的波长范围内提供有效的室温电致发光，并且至少包含含有大量镉和锡的n型部分，但在n型部分中形成次要成分。 在制造过程中，p型部分通常是用作衬底的锌或镉掺杂的单晶磷化铟。 n型部分通过液相从锡溶液外延而外延沉积。 得到的二极管在低损耗玻璃纤维的1.05微米波长下有效发射，并且与砷化镓激光器或电致发光二极管相比，可以更好地匹配红外至可见频率转换荧光体的吸收波长。 已获得超过1％的外部效率。