Surface passivation of GaAs junction laser devices
    1.
    发明授权
    Surface passivation of GaAs junction laser devices 失效
    GaAs结激光器件的表面钝化

    公开(公告)号:US3914465A

    公开(公告)日:1975-10-21

    申请号:US29212672

    申请日:1972-09-25

    Abstract: A method for protecting the surface of GaAs junction lasers, in particular the cleaved mirror surfaces of such devices. A native oxide is first grown on the surface of the device by immersing the device in an aqueous H2O2 solution wherein the pH is 1.5-3.5. The device is then immersed in an aqueous H2O2 solution which has been adjusted to a pH of 6-8 by a suitable hydroxide. This double oxidation technique provides substantial protection against the deleterious effects of water on the mirror surfaces.

    Abstract translation: 一种用于保护GaAs结激光器表面的方法,特别是这种器件的切割镜面。 首先通过将该装置浸入pH为1.5-3.5的H 2 O 2水溶液中,在该装置的表面上生长天然氧化物。 然后将该装置浸入H 2 O 2水溶液中,该水溶液通过合适的氢氧化物调节至pH为6-8。 这种双重氧化技术提供了大量的保护,防止水对镜面的有害影响。

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