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公开(公告)号:US3860783A
公开(公告)日:1975-01-14
申请号:US8175670
申请日:1970-10-19
Applicant: BELL TELEPHONE LABOR INC
Inventor: SCHMIDT PAUL HERMAN , SPENCER EDWARD GUERRANT
IPC: C23F4/00 , H01F10/00 , H01L21/00 , H01L21/263 , B23K15/00
CPC classification number: H01L21/2633 , C23F4/00 , H01F10/00 , H01L21/00
Abstract: A pattern of depressions or holes, defined by a pattern mask, is cut into a surface by means of a beam of ions with energies in the 1,000 to 75,000 electron volt range. Patterns including elements 1 micron wide have been reliably produced in thin films on metallic insulating and semiconducting substrates using photolithographic masking techniques.
Abstract translation: 由图案掩模限定的凹陷或孔的图案通过具有在1,000至75,000电子伏范围内的能量的离子束切割成表面。 已经使用光刻掩模技术在金属绝缘和半导体衬底上的薄膜中可靠地制造了包括1微米宽的元件。
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公开(公告)号:US3613056A
公开(公告)日:1971-10-12
申请号:US3613056D
申请日:1970-04-20
Applicant: BELL TELEPHONE LABOR INC
Inventor: BOBECK ANDREW HENRY , SCHMIDT PAUL HERMAN , SPENCER EDWARD GUERRANT , UITERT LE GRAND GERARD VAN , WALTERS EDWARD MARTIN
CPC classification number: G11C19/08 , C04B35/2675
Abstract: Uniaxial magnetic anisotropy in supposedly isotropic garnet compositions is found to be related to growth direction of the crystal. Wafers cut from crystalline sections, selected such that growth direction is consistent with formation of but a single 211 face, are usefully incorporated in bubble domain devices-a class of magnetic devices in which information is represented by enclosed single domain regions of polarity opposite to that of immediately surrounding material.
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