Ion etching through a pattern mask
    1.
    发明授权
    Ion etching through a pattern mask 失效
    通过一个模式掩蔽的离子蚀刻

    公开(公告)号:US3860783A

    公开(公告)日:1975-01-14

    申请号:US8175670

    申请日:1970-10-19

    CPC classification number: H01L21/2633 C23F4/00 H01F10/00 H01L21/00

    Abstract: A pattern of depressions or holes, defined by a pattern mask, is cut into a surface by means of a beam of ions with energies in the 1,000 to 75,000 electron volt range. Patterns including elements 1 micron wide have been reliably produced in thin films on metallic insulating and semiconducting substrates using photolithographic masking techniques.

    Abstract translation: 由图案掩模限定的凹陷或孔的图案通过具有在1,000至75,000电子伏范围内的能量的离子束切割成表面。 已经使用光刻掩模技术在金属绝缘和半导体衬底上的薄膜中可靠地制造了包括1微米宽的元件。

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