公开(公告)号：US5667586A

公开(公告)日：1997-09-16

申请号：US626115

申请日：1996-04-01

申请人： Bruce Allen Ek ,  Stephen McConnell Gates ,  Fernando Jose Guarin ,  Subramanian Srikanteswara Iyer ,  Adrian Roger Powell

发明人： Bruce Allen Ek ,  Stephen McConnell Gates ,  Fernando Jose Guarin ,  Subramanian Srikanteswara Iyer ,  Adrian Roger Powell

IPC分类号： H01L21/02 ,  H01L21/04 ,  H01L21/20 ,  H01L27/12 ,  H01L31/10 ,  H01L31/18 ,  H01L33/00 ,  H01S5/00 ,  H01S5/323 ,  C30B25/02

CPC分类号： H01L33/007 ,  H01L21/0445 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A structure is fabricated comprising a substrate, a dielectric layer formed over the substrate, and a single crystal layer of a compound formed over the dielectric layer. The single crystal layer is formed by the chemical reaction of at least a first element with an initial single crystal layer of a second element on the dielectric layer having an initial thickness of about 100 to about 10,000 angstroms.According to another aspect, a carbide single crystal layer is provided on a substrate by depositing carbon from a solid carbon source at a low rate and low temperature, followed by reacting the carbon with the underlying layer to convert it to the carbide.

摘要翻译： 制造的结构包括衬底，在衬底上形成的电介质层和在电介质层上形成的化合物的单晶层。 单晶层通过至少第一元素与电介质层上初始厚度为约100至约10,000埃的第二元素的初始单晶层的化学反应形成。 根据另一方面，通过在低速率和低温下从固体碳源沉积碳，然后使碳与下层反应以将其转化为碳化物，在基板上提供碳化物单晶层。