公开(公告)号：US20140339688A1

公开(公告)日：2014-11-20

申请号：US14278901

申请日：2014-05-15

Applicant: CAVENDISH KINETICS, INC.

Inventor： Roberto GADDI ,  Robertus Petrus VAN KAMPEN ,  Dennis J. YOST ,  Paul Albert CASTILLOU ,  Atul Prakash SHINGAL

IPC: B81B7/00

CPC classification number: B81B7/0064 ,  B81B2203/04 ,  B81B2207/07 ,  B81B2207/092 ,  B81B2207/093 ,  H05K1/0218 ,  H05K1/0243 ,  H05K1/113 ,  H05K3/3436 ,  H05K3/3452

Abstract: The present invention generally relates to techniques and structures that cancel or mitigate RF coupling from the RF circuit to the silicon die. To cancel or mitigate the RF coupling, a conductive coating may be formed over the RF-MEMS device. The conductive coating may be coupled to the die. Alternatively, the conductive coating may be coupled to the die through the RF-MEMS by having a through silicon via. Another manner for cancelling or mitigating RF coupling is to have no conductive traces located on the front side of the PCB.

Abstract translation: 本发明一般涉及抵消或减轻从RF电路到硅芯片的RF耦合的技术和结构。 为了消除或减轻RF耦合，可以在RF-MEMS器件上形成导电涂层。 导电涂层可以连接到管芯。 或者，导电涂层可以通过穿过硅通孔而通过RF-MEMS耦合到管芯。 取消或减轻RF耦合的另一种方式是在PCB正面没有导电迹线。