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公开(公告)号:US20240365670A1
公开(公告)日:2024-10-31
申请号:US18641417
申请日:2024-04-21
Applicant: Coretronic MEMS Corporation
Inventor: Hao-Chien Cheng , Kai-Chih Liang , Ming-Ching Wu
CPC classification number: H10N30/206 , B81B3/0021 , H10N30/802 , B81B2203/0163 , B81B2203/0346 , B81B2203/04 , B81B2203/058 , G02B26/0858
Abstract: A piezoelectric actuating apparatus includes a frame having an opening, a rotatable element, first and second actuating elements, a sensing element, transmission elements, a sensing electrode, and a driving electrode. The rotatable element is in the opening, connected to the frame via a rotating shaft structure, and reciprocatingly swings relative to the frame around an axis of the rotating shaft structure as a center. The first actuating element is connected to the rotatable element. The transmission elements are between the first and second actuating elements, and between the first actuating element and the sensing element. The second actuating element and the sensing element are coupled to the rotatable element via the transmission elements. The sensing electrode is on a part of the transmission elements and the sensing element. The driving electrode is on another part of the transmission elements and the first and second actuating elements.
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公开(公告)号:US12133060B2
公开(公告)日:2024-10-29
申请号:US18532607
申请日:2023-12-07
Applicant: Infineon Technologies AG
Inventor: Marc Fueldner , Andreas Wiesbauer , Athanasios Kollias
CPC classification number: H04R7/08 , B81B3/0021 , H04R7/16 , H04R19/04 , B81B2201/0257 , B81B2203/0127 , B81B2203/0353 , B81B2203/04 , H04R2201/003
Abstract: A system includes a first membrane, a second membrane and a third membrane spaced apart from one another, wherein the second membrane is between the first membrane and the third membrane, and the second membrane comprises a plurality of openings, a sealed low pressure chamber between the first membrane and the third membrane, and a plurality of electrodes in the sealed low pressure chamber.
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公开(公告)号:US20240351864A1
公开(公告)日:2024-10-24
申请号:US18136556
申请日:2023-04-19
Applicant: InvenSense, Inc.
Inventor: Roberto Martini , Matthew Julian Thompson , Giacomo Gafforelli , Luca Coronato , Luigi Esposito
CPC classification number: B81C1/00349 , B81B3/0018 , B81B2201/0235 , B81B2203/0109 , B81B2203/03 , B81B2203/04 , B81C2201/0109 , B81C2201/0132 , B81C2201/0147
Abstract: An actuator layer of a MEMS sensor is be fabricated to include multi-level features, such as additional sense electrodes, vertical bump stops, or weighted proof masses. A sacrificial layer is deposited on the actuator layer such that locations are provided for the multi-level features to extend vertically from the actuator layer. After the multi-layer features are fabricated on the actuator layer the sacrificial layer is removed. Additional processing such as patterning of the actuator layer may be performed to provide desired functionality and electrical signals to portions of the actuator layer, including to the multi-level features.
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公开(公告)号:US20240343552A1
公开(公告)日:2024-10-17
申请号:US18615358
申请日:2024-03-25
Applicant: Robert Bosch GmbH
Inventor: Christoph Schelling
CPC classification number: B81B3/0021 , H04R7/06 , H04R19/04 , B81B2201/0257 , B81B2201/0264 , B81B2203/0127 , B81B2203/04 , H04R2201/003
Abstract: A microelectromechanical component for interacting with a pressure gradient of a fluid. The component has a substrate with a through-cavity, a microelectromechanical transducer including a middle support layer and two diaphragm elements spaced apart from the middle support layer. The middle support layer has at least one center electrode. The diaphragm elements each have a separately contactable outer electrode. The diaphragm elements together with the middle support layer form one or more cavities on both sides of the middle support layer. The microelectromechanical transducer spans the through-cavity at least partially and is deformable along a vertical movement direction. The microelectromechanical transducer has a bending region. A deformation of the microelectromechanical transducer in the vertical movement direction results in a bending of the bending region. Spacers are arranged between the middle support layer and the diaphragm elements. At least one of the spacers is arranged in the bending region.
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公开(公告)号:US20240317579A1
公开(公告)日:2024-09-26
申请号:US18676090
申请日:2024-05-28
Applicant: ROHM CO., LTD.
Inventor: Daisuke KAMINISHI , Martin Wilfried HELLER , Toma FUJITA
IPC: B81C1/00 , B81B7/00 , G01P15/125
CPC classification number: B81C1/00269 , B81B7/0006 , G01P15/125 , B81B2201/0235 , B81B2203/0353 , B81B2203/04 , B81C2201/013 , B81C2201/0159 , B81C2201/0176 , B81C2203/037
Abstract: A MEMS sensor includes a bond portion in which a metal structure in a device substrate and a metal laminate are eutectically bonded. The bond portion bonds the device substrate and a lid substrate. The metal laminate is located on a main surface of the lid substrate and facing an exposed portion in the metal structure. The metal laminate includes a first metal and a second metal different from the first metal.
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公开(公告)号:US12098069B2
公开(公告)日:2024-09-24
申请号:US17540750
申请日:2021-12-02
Applicant: Sangwoo Lee
Inventor: Sangwoo Lee
CPC classification number: B81C1/00111 , A61B5/293 , B81B1/008 , A61B2562/125 , A61N1/0529 , B81B2201/055 , B81B2203/0361 , B81B2203/04 , B81C2201/0133
Abstract: A method of manufacturing a plurality of neural probes from a silicon wafer in which after neural probes are formed on one side of a silicon wafer, the other side of the silicon wafter is subject to a dicing process that separates and adjusts the thickness of the neural probes.
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公开(公告)号:US12071338B2
公开(公告)日:2024-08-27
申请号:US17459073
申请日:2021-08-27
Inventor: Christian Drabe , Bert Kaiser
CPC classification number: B81B3/0051 , G02B26/0833 , G02B26/0841 , B81B2201/033 , B81B2201/035 , B81B2201/037 , B81B2201/042 , B81B2203/0154 , B81B2203/04 , B81B2203/051 , B81B2203/053 , B81B2203/058
Abstract: A micromechanical structure has a first micromechanical element, a second micromechanical element and a torsion spring arrangement having a first torsion spring element, having a first center line, mechanically connected to the first micromechanical element at a first contact region and to the second micromechanical element at a second contact region, and having a second torsion spring element, having a second center line, mechanically connected to the first micromechanical member at a third contact region and to the second micromechanical member at a fourth contact region in order to connect the first micromechanical member and the second micromechanical member to be movable relative to each other. A distance between the first and second center lines, starting from the first and third contact regions toward the second and fourth contact regions, decreases in a first portion and increases in a second portion. In a rest position of the micromechanical structure, the first and second torsion spring elements are arranged without contact to each other.
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公开(公告)号:US12070773B2
公开(公告)日:2024-08-27
申请号:US18099456
申请日:2023-01-20
Applicant: BFLY OPERATIONS, INC.
Inventor: Lingyun Miao , Jianwei Liu , Keith G. Fife
CPC classification number: B06B1/0292 , B81B3/0021 , B81C1/00158 , B81B2201/0271 , B81B2203/0127 , B81B2203/0315 , B81B2203/04 , B81C2201/0125 , B81C2201/013 , B81C2201/0176 , B81C2203/03
Abstract: An ultrasonic transducer device includes a patterned film stack disposed on first regions of a substrate, the patterned film stack including a metal electrode layer and a bottom cavity layer formed on the metal electrode layer. The ultrasonic transducer device further includes a planarized insulation layer disposed on second regions of the substrate layer, a cavity formed in a membrane support layer and a CMP stop layer, the CMP stop layer including a top layer of the patterned film stack and the membrane support layer formed over the patterned film stack and the planarized insulation layer. The ultrasonic transducer device also includes a membrane bonded to the membrane support layer. The CMP stop layer underlies portions of the membrane support layer but not the cavity.
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公开(公告)号:US20240270568A1
公开(公告)日:2024-08-15
申请号:US18044571
申请日:2022-07-15
Inventor: Tao YANG , HuanHuan LI , Lei PENG , JunWei JIANG , NiNi ZHANG , QingFeng LIU , Li MA , Fang WANG
CPC classification number: B81C1/00698 , B81B3/0086 , G02B26/0841 , H02N1/008 , B81B2201/042 , B81B2203/0136 , B81B2203/04 , B81C2201/0109
Abstract: Disclosed are an electrostatically driven comb structure of an MEMS (Micro Electro Mechanical System), a micro-mirror using the same, and a preparation method therefor. The surface of a comb of the electrostatically driven comb structure of the MEMS has an insulating layer, and the insulating layers on the surfaces of adjacent combs are the same type of insulating layers or different insulating layers; the micro-mirror with the electrostatically driven comb structure of the MEMS successively includes a substrate, an isolating layer and a device layer from bottom to top; the method for manufacturing the micro-mirror prepares the insulating layers by high temperature oxidization, plasma enhanced chemical vapor deposition, low pressure chemical vapor deposition, atmospheric pressure chemical vapor deposition, physical deposition, atomic layer deposition or stepwise heterogeneous deposition; same or different insulating layers are obtained on the surfaces of the driving comb and the ground comb; when the driving comb and the ground comb adsorb each other, the insulating layers on the surfaces of the two contact without forming a short circuit, so that a good insulating effect is achieved. The electrostatically driven MEMS micro-mirror capable of preventing adsorptive damage provided by the present invention features compact structure and simple process.
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公开(公告)号:US12063469B2
公开(公告)日:2024-08-13
申请号:US17647653
申请日:2022-01-11
Applicant: Infineon Technologies AG
Inventor: Abidin Güçlü Onaran , Marc Fueldner , Dietmar Straeussnigg
CPC classification number: H04R1/2807 , B81B3/0078 , H04R7/06 , H04R7/16 , H04R19/04 , B81B2201/0257 , B81B2203/0127 , B81B2203/04 , H04R2201/003
Abstract: A MicroElectroMechanical (MEMS) device includes a suspended electrode structure anchored to a substrate, the MEMS device having a MEMS resonance mode, and a Tuned Mass Damping (TMD) structure, wherein a portion of the suspended electrode structure forms a TMD structure having a TMD spring element and a TMD mass element, for providing a TMD resonance mode counteracting the MEMS resonance mode.
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