公开(公告)号：US11919125B2

公开(公告)日：2024-03-05

申请号：US16583696

申请日：2019-09-26

Applicant: CORNING INCORPORATED

Inventor： Lance Changyong Kim ,  Fei Lu ,  Xu Ouyang ,  Yeguang Pan

IPC: B24B37/30 ,  B24B37/20 ,  H01L21/683

CPC classification number: B24B37/30 ,  B24B37/20 ,  H01L21/6835

Abstract: A method of forming a carrier wafer includes the steps of: lapping a first surface and a second surface of the carrier wafer such that the carrier wafer is substantially flat, the carrier wafer comprising a glass, glass-ceramic or ceramic material, wherein the carrier wafer has a diameter of from 250 mm to 450 mm and a thickness of from 0.5 mm to 2 mm after lapping; and polishing the first surface of the carrier wafer with at least one of a differential pressure, a differential speed or a differential time between a center portion and an edge portion of the carrier wafer such that the first surface has a convex or concave shape.

公开(公告)号：US20230193452A1

公开(公告)日：2023-06-22

申请号：US18078207

申请日：2022-12-09

Applicant: CORNING INCORPORATED

Inventor： Nicholas Levi Bredberg ,  Lance Changyong Kim ,  Yongli Xu

IPC: C23C14/06 ,  C23C14/22

CPC classification number: C23C14/0694 ,  C23C14/221

Abstract: Optical elements including YbF3 layers with high transmittance in the LWIR spectral range are described. The YbF3 layer is produced by an ion-assisted deposition process under high voltage conditions. Dense, uniform, and nearly defect-free YbF3 layers are formed. The improved material quality of the YbF3 layers leads to low absorption in the LWIR spectral range, especially at wavelengths above 10.0 microns. The extinction coefficient of the YbF3 layers is less than 0.0400 at a wavelength of 13.5 microns.