公开(公告)号：US20220302104A1

公开(公告)日：2022-09-22

申请号：US17639076

申请日：2020-08-06

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Danye LIANG ,  Guangyang WANG

IPC: H01L27/02

Abstract: In one aspect, a bidirectional Electro-Static Discharge (ESD) protection device includes: a first well region, a second well region and a third well region formed in a semiconductor substrate; two or more first injection regions and two or more second injection regions formed in the first well region, and two or more fourth injection regions and two or more fifth injection regions formed in the second well region; and third injection regions formed at a junction of the first well region and the third well region and at a junction of the second well region and the third well region.

公开(公告)号：US20200266188A1

公开(公告)日：2020-08-20

申请号：US16644462

申请日：2018-08-03

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Guangyang WANG

IPC: H01L27/02 ,  H01L23/60 ,  H01L27/06

Abstract: A high voltage device with self-electrostatic discharge protection. The device comprises: a semiconductor substrate; a first N-well (201), a P-well (202), and a second N-well (209) formed in the semiconductor substrate; a first N+ ion implantation region (203) and a first isolation region (207) formed in the first N-well (201); a second N+ ion implantation region (204) and a P+ ion implantation region (205) adjacent to the second N+ ion implantation region (204) that are formed in the P-well (202); a third N+ ion implantation region (208) formed in the second N-well (209); and a second isolation region (210) formed in the semiconductor substrate, the second isolation region (210) covering a portion of the second N-well (209) and a portion of the P-well (202), wherein the second N+ ion implantation region (203), the P+ ion implantation region (205), and the third N+ ion implantation region (208) constitute an NPN-type BJT, and the electrostatic discharge protection is achieved by means of the BJT.

公开(公告)号：US20180122794A1

公开(公告)日：2018-05-03

申请号：US15569848

申请日：2016-04-29

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Jun SUN ,  Zhongyu LIN ,  Guangyang WANG ,  Guipeng SUN

IPC: H01L27/02 ,  H01L29/78

CPC classification number: H01L27/0262 ,  H01L29/402 ,  H01L29/7817 ,  H01L29/87

Abstract: An electrostatic protection device of an LDMOS silicon controlled structure comprises a P-type substrate (310), an N-well (320) and a P-well (330) on the substrate, a gate electrode (340) overlapping on the P-well (330) and extending to an edge of the N-well (320), a first N+ structure and a first P+ structure provided in the N-well (320), and a second N+ structure and a second P+ structure provided in the P-well(330), the first N+ structure being a drain electrode N+ structure (322), the first N+ structure being a drain electrode N+ structure (322), the first P+ structure being a drain electrode P+ structure (324), the second N+ structure being a source electrode N+ structure (332), the second P+ structure being a source P+ structure (334), and a distance from the drain electrode P+ structure (324) to the gate electrode (340) being greater than a distance from the drain electrode N+ structure (322) to the gate electrode (340).

公开(公告)号：US20210005598A1

公开(公告)日：2021-01-07

申请号：US16766635

申请日：2018-11-29

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Guangyang WANG

IPC: H01L27/02

Abstract: Provided by the present disclosure is a bidirectional electrostatic discharge protection device which includes a first doped region, a second doped region, a third doped region, a first diode and a second diode. The first doped region has a first conductivity type, and the second doped region and the third doped region both have a second conductivity type. The first doped region has a ring structure outside the second doped region and the third doped region. A cathode of the first diode is coupled to the first doped region, and an anode of the first diode is coupled to a first port together with the second doped region. A cathode of the second diode is coupled to the first doped region, and an anode of the second diode is coupled to a second port together with the third doped region.

公开(公告)号：US20190198494A1

公开(公告)日：2019-06-27

申请号：US16329665

申请日：2017-08-29

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Guangyang WANG

IPC: H01L27/02 ,  H01L23/528

CPC classification number: H01L27/0274 ,  H01L23/528 ,  H01L23/60 ,  H01L27/088 ,  H02H9/00

Abstract: A semiconductor device for enhancing electrostatic discharge (ESD) protection and a layout structure thereof are provided. An ESD protection device and a protected device (300) with a small feature linewidth are located on the same well region. The device (300) with the small feature linewidth is located at a middle portion. The ESD protection device is disposed at both sides of the device (300) with the small feature linewidth.