公开(公告)号：US20240079404A1

公开(公告)日：2024-03-07

申请号：US18262100

申请日：2022-01-21

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Jun SUN

IPC: H01L27/02

CPC classification number: H01L27/0259

Abstract: The present application relates to an electrostatic protection structure and a preparation method therefor. The electrostatic protection structure comprises a substrate, a buried layer, a first deep well, a second deep well and a third deep well. A well region of the opposite conductivity type and a heavily doped region of the same conductivity type are provided in the first deep well, and well regions and heavily doped regions of the same conductivity type are respectively provided in the second deep well and the third deep well. The first deep well, a first well region and a second well region are floating; a first heavily doped region leads out electrostatic voltage; and a sixth heavily doped region is grounded.

公开(公告)号：US20180122794A1

公开(公告)日：2018-05-03

申请号：US15569848

申请日：2016-04-29

Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Jun SUN ,  Zhongyu LIN ,  Guangyang WANG ,  Guipeng SUN

IPC: H01L27/02 ,  H01L29/78

CPC classification number: H01L27/0262 ,  H01L29/402 ,  H01L29/7817 ,  H01L29/87

Abstract: An electrostatic protection device of an LDMOS silicon controlled structure comprises a P-type substrate (310), an N-well (320) and a P-well (330) on the substrate, a gate electrode (340) overlapping on the P-well (330) and extending to an edge of the N-well (320), a first N+ structure and a first P+ structure provided in the N-well (320), and a second N+ structure and a second P+ structure provided in the P-well(330), the first N+ structure being a drain electrode N+ structure (322), the first N+ structure being a drain electrode N+ structure (322), the first P+ structure being a drain electrode P+ structure (324), the second N+ structure being a source electrode N+ structure (332), the second P+ structure being a source P+ structure (334), and a distance from the drain electrode P+ structure (324) to the gate electrode (340) being greater than a distance from the drain electrode N+ structure (322) to the gate electrode (340).