公开(公告)号：US06818497B2

公开(公告)日：2004-11-16

申请号：US10330125

申请日：2002-12-30

申请人： Chang-Rock Song ,  Hyung-Bok Choi

发明人： Chang-Rock Song ,  Hyung-Bok Choi

IPC分类号： H01L218242

CPC分类号： H01L28/60 ,  H01L21/2885 ,  H01L21/76841 ,  H01L21/76877 ,  H01L28/55

摘要： The present invention relates to a method for fabricating a capacitor of a semiconductor memory device using an electrochemical deposition. The method in accordance with the present invention includes the steps of forming a contact hole in an insulating layer formed on a substrate; forming a plug in the contact hole, wherein the plug contains a nitride layer; forming a seed layer on the insulating layer and in the contact hole; forming a sacrificial layer including a trench overlapped with the contact hole; forming a Ru bottom electrode in the trench with electrochemical deposition; removing the sacrificial layer and exposing the Ru bottom electrode, wherein the seed layer not covered with the Ru bottom electrode is exposed; removing the exposed seed layer; forming a dielectric layer on the Ru bottom electrode; and forming a top electrode on the dielectric layer.

摘要翻译： 本发明涉及使用电化学沉积制造半导体存储器件的电容器的方法。 根据本发明的方法包括在形成在基板上的绝缘层中形成接触孔的步骤; 在所述接触孔中形成插塞，其中所述插塞包含氮化物层; 在绝缘层和接触孔中形成晶种层; 形成包括与所述接触孔重叠的沟槽的牺牲层; 在电化学沉积中在沟槽中形成Ru底电极; 去除牺牲层并暴露Ru底部电极，其中未被Ru底部电极覆盖的种子层被暴露; 去除暴露的种子层; 在Ru底部电极上形成电介质层; 并在电介质层上形成顶部电极。

公开(公告)号：US06699769B2

公开(公告)日：2004-03-02

申请号：US10330353

申请日：2002-12-30

申请人： Chang-Rock Song ,  Hyung-Bok Choi

发明人： Chang-Rock Song ,  Hyung-Bok Choi

IPC分类号： H01L2120

CPC分类号： H01L21/7687 ,  H01L21/2885 ,  H01L21/32134 ,  H01L21/76873 ,  H01L21/76889 ,  H01L28/55 ,  H01L28/60

摘要： Provided is a method for fabricating a capacitor using an electrochemical deposition method and Ce(NH4)2(NO3)6 solution. The method includes the steps of: a) forming a contact hole in an insulation layer on a substrate; b) forming a plug including nitride in the contact hole; c) forming a Ru seed layer in the contact hole and on the insulation layer; d) forming a sacrificial layer including an open area overlapped with the contact hole on the Ru seed layer; e) forming a Ru layer for an electrode of the capacitor in the open area by performing electrochemical deposition; f) removing the sacrificial layer, whereby the Ru seed layer not covered with the Ru layer is exposed; and g) etching the exposed Ru seed layer by using an aqueous solution including Ce(NH4)2(NO3)6.

摘要翻译： 提供了使用电化学沉积法和Ce（NH 4）2（NO 3）6溶液制造电容器的方法。 该方法包括以下步骤：a）在基板上的绝缘层中形成接触孔; b）在接触孔中形成包括氮化物的塞子; c）在接触孔和绝缘层上形成Ru籽晶层; d）形成包括与Ru籽晶层上的接触孔重叠的开口区域的牺牲层; e）通过进行电化学沉积在开放区域形成用于电容器电极的Ru层; f）去除牺牲层，由此暴露不被Ru层覆盖的Ru籽晶层; 并且g）通过使用包含Ce（NH 4）2（NO 3）6的水溶液来蚀刻暴露的Ru种子层。

公开(公告)号：US06583021B2

公开(公告)日：2003-06-24

申请号：US10141713

申请日：2002-05-09

申请人： Chang-Rock Song

发明人： Chang-Rock Song

IPC分类号： H01L218242

CPC分类号： H01L28/40 ,  H01L21/28568 ,  H01L21/31604 ,  H01L21/31683 ,  H01L28/60 ,  Y10S148/014

摘要： Disclosed herein is a method of fabricating a capacitor. The method includes the steps of: forming a Ti1−xHfxN layer on a substrate, wherein x is in a range from 0 to 0.5; forming an electrode layer on the Ti1−xHfxN layer; and forming a HfO2 layer on an interface between the electrode layer and the Ti1−xHfxN layer by performing a thermal treatment in an oxygen gas-containing atmosphere.

摘要翻译： 这里公开了一种制造电容器的方法。 该方法包括以下步骤：在衬底上形成Ti1-xHfxN层，其中x在0至0.5的范围内; 在Ti1-xHfxN层上形成电极层; 通过在含氧气氛中进行热处理，在电极层与Ti1-xHfxN层的界面上形成HfO 2层。

公开(公告)号：US06541332B2

公开(公告)日：2003-04-01

申请号：US10146121

申请日：2002-05-15

申请人： Chang-Rock Song

发明人： Chang-Rock Song

IPC分类号： H01L218242

CPC分类号： H01L28/40 ,  H01L21/31604 ,  H01L28/91

摘要： The disclosure relates to a method for fabricating a capacitor that prevents a rise in the production cost and complexity of production processes caused by performing deposition and subsequent treatment thereof whenever a layer is formed. The disclosure provides a method for fabricating a capacitor, including the steps of: forming a Ti1-xZrxN layer on a substrate, wherein x is in the range of 0 to 0.5, inclusive; forming an electrode layer on the Ti1-xZrxN layer; and forming a ZrO2 layer on an interface between the electrode layer and the Ti1-xZrxN layer by performing a thermal treatment in an atmosphere containing oxygen gas, whereby a capacitor having a bottom electrode formed with the Ti1-xZrxN layer, a dielectric layer formed with the ZrO2 layer, and a top electrode formed with the electrode layer is fabricated.

摘要翻译： 本公开涉及一种用于制造电容器的方法，每当形成层时，电容器的制造成本和生产过程的复杂性都由执行沉积和随后的处理而引起。 本发明提供了制造电容器的方法，包括以下步骤：在衬底上形成Ti1-xZrxN层，其中x在0至0.5的范围内; 在Ti1-xZrxN层上形成电极层; 以及在包含氧气的气氛中进行热处理，在电极层与Ti1-xZrxN层之间的界面上形成ZrO 2层，由此形成具有由Ti1-xZrxN层形成的底部电极的电容器，形成有 ZrO 2层和形成有电极层的顶部电极。