公开(公告)号：US08003524B2

公开(公告)日：2011-08-23

申请号：US12177309

申请日：2008-07-22

申请人： Chih-Chao Yang ,  Simon Gaudet ,  Christian Lavoie ,  Shom Ponoth ,  Terry A. Spooner

发明人： Chih-Chao Yang ,  Simon Gaudet ,  Christian Lavoie ,  Shom Ponoth ,  Terry A. Spooner

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure which includes a plating seed layer that has enhanced conductive material, preferably, Cu, diffusion properties is provided that eliminates the need for utilizing separate diffusion and seed layers. Specifically, the present invention provides an oxygen/nitrogen transition region within a plating seed layer for interconnect metal diffusion enhancement. The plating seed layer may include Ru, Ir or alloys thereof, and the interconnect conductive material may include Cu, Al, AlCu, W, Ag, Au and the like. Preferably, the interconnect conductive material is Cu or AlCu. In more specific terms, the present invention provides a single seeding layer which includes an oxygen/nitrogen transition region sandwiched between top and bottom seed regions. The presence of the oxygen/nitrogen transition region within the plating seed layer dramatically enhances the diffusion barrier resistance of the plating seed.

摘要翻译： 提供一种互连结构，其包括具有增强的导电材料，优选Cu扩散性质的电镀种子层，其不需要使用单独的扩散和种子层。 具体地说，本发明提供了用于互连金属扩散增强的电镀种子层内的氧/氮过渡区域。 电镀种子层可以包括Ru，Ir或其合金，并且互连导电材料可以包括Cu，Al，AlCu，W，Ag，Au等。 优选地，互连导电材料是Cu或AlCu。 在更具体的术语中，本发明提供了单个接种层，其包括夹在顶部和底部种子区域之间的氧/氮过渡区域。 电镀种子层内的氧/氮过渡区的存在显着提高了电镀种子的扩散阻挡性。

公开(公告)号：US20090155996A1

公开(公告)日：2009-06-18

申请号：US12177309

申请日：2008-07-22

申请人： Chih-Chao Yang ,  Simon Gaudet ,  Christian Lavoie ,  Shom Ponoth ,  Terry A. Spooner

发明人： Chih-Chao Yang ,  Simon Gaudet ,  Christian Lavoie ,  Shom Ponoth ,  Terry A. Spooner

IPC分类号： H01L21/768

CPC分类号： H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure which includes a plating seed layer that has enhanced conductive material, preferably, Cu, diffusion properties is provided that eliminates the need for utilizing separate diffusion and seed layers. Specifically, the present invention provides an oxygen/nitrogen transition region within a plating seed layer for interconnect metal diffusion enhancement. The plating seed layer may include Ru, Ir or alloys thereof, and the interconnect conductive material may include Cu, Al, AlCu, W, Ag, Au and the like. Preferably, the interconnect conductive material is Cu or AlCu. In more specific terms, the present invention provides a single seeding layer which includes an oxygen/nitrogen transition region sandwiched between top and bottom seed regions. The presence of the oxygen/nitrogen transition region within the plating seed layer dramatically enhances the diffusion barrier resistance of the plating seed.

摘要翻译： 提供一种互连结构，其包括具有增强的导电材料，优选Cu扩散性质的电镀种子层，其不需要使用单独的扩散和种子层。 具体地说，本发明提供了用于互连金属扩散增强的电镀种子层内的氧/氮过渡区域。 电镀种子层可以包括Ru，Ir或其合金，并且互连导电材料可以包括Cu，Al，AlCu，W，Ag，Au等。 优选地，互连导电材料是Cu或AlCu。 在更具体的术语中，本发明提供了单个接种层，其包括夹在顶部和底部种子区域之间的氧/氮过渡区域。 电镀种子层内的氧/氮过渡区的存在显着提高了电镀种子的扩散阻挡性。

公开(公告)号：US07498254B2

公开(公告)日：2009-03-03

申请号：US11682581

申请日：2007-03-06

申请人： Chih-Chao Yang ,  Simon Gaudet ,  Christian Lavoie ,  Shom Ponoth ,  Terry A. Spooner

发明人： Chih-Chao Yang ,  Simon Gaudet ,  Christian Lavoie ,  Shom Ponoth ,  Terry A. Spooner

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure which includes a plating seed layer that has enhanced conductive material, preferably, Cu, diffusion properties is provided that eliminates the need for utilizing separate diffusion and seed layers. Specifically, the present invention provides an oxygen/nitrogen transition region within a plating seed layer for interconnect metal diffusion enhancement. The plating seed layer may include Ru, Ir or alloys thereof and the interconnect conductive material may include Cu, Al, AlCu, W, Ag, Au and the like. Preferably, the interconnect conductive material is Cu or AlCu. In more specific terms, the present invention provides a single seeding layer which includes an oxygen/nitrogen transition region sandwiched between top and bottom seed regions. The presence of the oxygen/nitrogen transition region within the plating seed layer dramatically enhances the diffusion barrier resistance of the plating seed.

摘要翻译： 提供一种互连结构，其包括具有增强的导电材料，优选Cu扩散性质的电镀种子层，其不需要使用单独的扩散和种子层。 具体地说，本发明提供了用于互连金属扩散增强的电镀种子层内的氧/氮过渡区域。 电镀种子层可以包括Ru，Ir或其合金，并且互连导电材料可以包括Cu，Al，AlCu，W，Ag，Au等。 优选地，互连导电材料是Cu或AlCu。 在更具体的术语中，本发明提供了单个接种层，其包括夹在顶部和底部种子区域之间的氧/氮过渡区域。 电镀种子层内的氧/氮过渡区的存在显着提高了电镀种子的扩散阻挡性。

公开(公告)号：US07215006B2

公开(公告)日：2007-05-08

申请号：US11245540

申请日：2005-10-07

申请人： Chih-Chao Yang ,  Simon Gaudet ,  Christian Lavoie ,  Shom Ponoth ,  Terry A. Spooner

发明人： Chih-Chao Yang ,  Simon Gaudet ,  Christian Lavoie ,  Shom Ponoth ,  Terry A. Spooner

IPC分类号： H01L23/58

CPC分类号： H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure which includes a plating seed layer that has enhanced conductive material, preferably, Cu, diffusion properties is provided that eliminates the need for utilizing separate diffusion and seed layers. Specifically, the present invention provides an oxygen/nitrogen transition region within a plating seed layer for interconnect metal diffusion enhancement. The plating seed layer may include Ru, Ir or alloys thereof, and the interconnect conductive material may include Cu, Al, AlCu, W, Ag, Au and the like. Preferably, the interconnect conductive material is Cu or AlCu. In more specific terms, the present invention provides a single seeding layer which includes an oxygen/nitrogen transition region sandwiched between top and bottom seed regions. The presence of the oxygen/nitrogen transition region within the plating seed layer dramatically enhances the diffusion barrier resistance of the plating seed.

摘要翻译： 提供一种互连结构，其包括具有增强的导电材料，优选Cu扩散性质的电镀种子层，其不需要使用单独的扩散和种子层。 具体地说，本发明提供了用于互连金属扩散增强的电镀种子层内的氧/氮过渡区域。 电镀种子层可以包括Ru，Ir或其合金，并且互连导电材料可以包括Cu，Al，AlCu，W，Ag，Au等。 优选地，互连导电材料是Cu或AlCu。 在更具体的术语中，本发明提供了单个接种层，其包括夹在顶部和底部种子区域之间的氧/氮过渡区域。 电镀种子层内的氧/氮过渡区的存在显着提高了电镀种子的扩散阻挡性。

公开(公告)号：US20070148826A1

公开(公告)日：2007-06-28

申请号：US11682581

申请日：2007-03-06

申请人： Chih-Chao Yang ,  Simon Gaudet ,  Christian Lavoie ,  Shom Ponoth ,  Terry Spooner

发明人： Chih-Chao Yang ,  Simon Gaudet ,  Christian Lavoie ,  Shom Ponoth ,  Terry Spooner

IPC分类号： H01L21/00

CPC分类号： H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure which includes a plating seed layer that has enhanced conductive material, preferably, Cu, diffusion properties is provided that eliminates the need for utilizing separate diffusion and seed layers. Specifically, the present invention provides an oxygen/nitrogen transition region within a plating seed layer for interconnect metal diffusion enhancement. The plating seed layer may include Ru, Ir or alloys thereof and the interconnect conductive material may include Cu, Al, AlCu, W, Ag, Au and the like. Preferably, the interconnect conductive material is Cu or AlCu. In more specific terms, the present invention provides a single seeding layer which includes an oxygen/nitrogen transition region sandwiched between top and bottom seed regions. The presence of the oxygen/nitrogen transition region within the plating seed layer dramatically enhances the diffusion barrier resistance of the plating seed.

摘要翻译： 提供一种互连结构，其包括具有增强的导电材料，优选Cu扩散性质的电镀种子层，其不需要使用单独的扩散和种子层。 具体地说，本发明提供了用于互连金属扩散增强的电镀种子层内的氧/氮过渡区域。 电镀种子层可以包括Ru，Ir或其合金，并且互连导电材料可以包括Cu，Al，AlCu，W，Ag，Au等。 优选地，互连导电材料是Cu或AlCu。 在更具体的术语中，本发明提供了单个接种层，其包括夹在顶部和底部种子区域之间的氧/氮过渡区域。 电镀种子层内的氧/氮过渡区的存在显着提高了电镀种子的扩散阻挡性。

公开(公告)号：US20070080429A1

公开(公告)日：2007-04-12

申请号：US11245540

申请日：2005-10-07

申请人： Chih-Chao Yang ,  Simon Gaudet ,  Christian Lavoie ,  Shom Ponoth ,  Terry Spooner

发明人： Chih-Chao Yang ,  Simon Gaudet ,  Christian Lavoie ,  Shom Ponoth ,  Terry Spooner

IPC分类号： H01L23/58

CPC分类号： H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure which includes a plating seed layer that has enhanced conductive material, preferably, Cu, diffusion properties is provided that eliminates the need for utilizing separate diffusion and seed layers. Specifically, the present invention provides an oxygen/nitrogen transition region within a plating seed layer for interconnect metal diffusion enhancement. The plating seed layer may include Ru, Ir or alloys thereof, and the interconnect conductive material may include Cu, Al, AlCu, W, Ag, Au and the like. Preferably, the interconnect conductive material is Cu or AlCu. In more specific terms, the present invention provides a single seeding layer which includes an oxygen/nitrogen transition region sandwiched between top and bottom seed regions. The presence of the oxygen/nitrogen transition region within the plating seed layer dramatically enhances the diffusion barrier resistance of the plating seed.

摘要翻译： 提供一种互连结构，其包括具有增强的导电材料，优选Cu扩散性质的电镀种子层，其不需要使用单独的扩散和种子层。 具体地说，本发明提供了用于互连金属扩散增强的电镀种子层内的氧/氮过渡区域。 电镀种子层可以包括Ru，Ir或其合金，并且互连导电材料可以包括Cu，Al，AlCu，W，Ag，Au等。 优选地，互连导电材料是Cu或AlCu。 在更具体的术语中，本发明提供了单个接种层，其包括夹在顶部和底部种子区域之间的氧/氮过渡区域。 电镀种子层内的氧/氮过渡区的存在显着提高了电镀种子的扩散阻挡性。

公开(公告)号：US07682968B2

公开(公告)日：2010-03-23

申请号：US12108001

申请日：2008-04-23

申请人： Cyril Cabral, Jr. ,  Roy A. Carruthers ,  Christophe Detavernier ,  Simon Gaudet ,  Christian Lavoie ,  Huiling Shang

发明人： Cyril Cabral, Jr. ,  Roy A. Carruthers ,  Christophe Detavernier ,  Simon Gaudet ,  Christian Lavoie ,  Huiling Shang

IPC分类号： H01L21/44

CPC分类号： H01L21/28525 ,  H01L21/28052 ,  H01L21/28518 ,  H01L29/665

摘要： A method for forming germano-silicide contacts atop a Ge-containing layer that is more resistant to etching than are conventional silicide contacts that are formed from a pure metal is provided. The method of the present invention includes first providing a structure which comprises a plurality of gate regions located atop a Ge-containing substrate having source/drain regions therein. After this step of the present invention, a Si-containing metal layer is formed atop the said Ge-containing substrate. In areas that are exposed, the Ge-containing substrate is in contact with the Si-containing metal layer. Annealing is then performed to form a germano-silicide compound in the regions in which the Si-containing metal layer and the Ge-containing substrate are in contact; and thereafter, any unreacted Si-containing metal layer is removed from the structure using a selective etch process. In some embodiments, an additional annealing step can follow the removal step. The method of the present invention provides a structure having a germano-silicide contact layer atop a Ge-containing substrate, wherein the germano-silicide contact layer contains more Si than the underlying Ge-containing substrate.

摘要翻译： 提供了一种形成锗硅化物的方法，该方法与由纯金属形成的常规硅化物接触相比更能抵抗蚀刻的含Ge层顶部接触。 本发明的方法包括首先提供一种结构，该结构包括位于其中具有源极/漏极区域的含Ge衬底顶部的多个栅极区域。 在本发明的该步骤之后，在所述含Ge基材上形成含Si金属层。 在暴露的区域中，含Ge衬底与含Si金属层接触。 然后进行退火以在含Si金属层和含Ge基板接触的区域中形成锗化硅化合物; 此后，使用选择性蚀刻工艺从结构中除去任何未反应的含Si金属层。 在一些实施方案中，附加的退火步骤可以跟随去除步骤。 本发明的方法提供了一种在含Ge衬底顶上具有锗硅化物接触层的结构，其中锗硅化物接触层含有比下面的含Ge衬底更多的Si。

公开(公告)号：US20080217781A1

公开(公告)日：2008-09-11

申请号：US12105037

申请日：2008-04-17

申请人： Christophe Detavernier ,  Simon Gaudet ,  Christian Lavoie ,  Conal E. Murray

发明人： Christophe Detavernier ,  Simon Gaudet ,  Christian Lavoie ,  Conal E. Murray

IPC分类号： H01L23/498

CPC分类号： H01L21/28518 ,  H01L21/2855

摘要： The present invention provides a method for producing thin nickel (Ni) monosilicide or NiSi films (having a thickness on the order of about 30 nm or less), as contacts in CMOS devices wherein an amorphous Ni alloy silicide layer is formed during annealing which eliminates (i.e., completely by-passing) the formation of metal-rich silicide layers. By eliminating the formation of the metal-rich silicide layers, the resultant NiSi film formed has improved surface roughness as compared to a NiSi film formed from a metal-rich silicide phase. The method of the present invention also forms Ni monosilicide films without experiencing any dependence of the dopant type concentration within the Si-containing substrate that exists with the prior art NiSi films.

公开(公告)号：US08154130B2

公开(公告)日：2012-04-10

申请号：US12107992

申请日：2008-04-23

申请人： Cyril Cabral, Jr. ,  Roy A. Carruthers ,  Christophe Detavernier ,  Simon Gaudet ,  Christian Lavoie ,  Huiling Shang

发明人： Cyril Cabral, Jr. ,  Roy A. Carruthers ,  Christophe Detavernier ,  Simon Gaudet ,  Christian Lavoie ,  Huiling Shang

IPC分类号： H01L29/40

CPC分类号： H01L21/28525 ,  H01L21/28052 ,  H01L21/28518 ,  H01L29/665

摘要： A method for forming germano-silicide contacts atop a Ge-containing layer that is more resistant to etching than are conventional silicide contacts that are formed from a pure metal is provided. The method of the present invention includes first providing a structure which comprises a plurality of gate regions located atop a Ge-containing substrate having source/drain regions therein. After this step of the present invention, a Si-containing metal layer is formed atop the said Ge-containing substrate. In areas that are exposed, the Ge-containing substrate is in contact with the Si-containing metal layer. Annealing is then performed to form a germano-silicide compound in the regions in which the Si-containing metal layer and the Ge-containing substrate are in contact; and thereafter, any unreacted Si-containing metal layer is removed from the structure using a selective etch process. In some embodiments, an additional annealing step can follow the removal step. The method of the present invention provides a structure having a germano-silicide contact layer atop a Ge-containing substrate, wherein the germano-silicide contact layer contains more Si than the underlying Ge-containing substrate.

摘要翻译： 提供了一种形成锗硅化物的方法，该方法与由纯金属形成的常规硅化物接触相比更能抵抗蚀刻的含Ge层顶部接触。 本发明的方法包括首先提供一种结构，该结构包括位于其中具有源极/漏极区域的含Ge衬底顶部的多个栅极区域。 在本发明的该步骤之后，在所述含Ge基材上形成含Si金属层。 在暴露的区域中，含Ge衬底与含Si金属层接触。 然后进行退火以在含Si金属层和含Ge基板接触的区域中形成锗化硅化合物; 此后，使用选择性蚀刻工艺从结构中除去任何未反应的含Si金属层。 在一些实施方案中，附加的退火步骤可以跟随去除步骤。 本发明的方法提供了一种在含Ge衬底顶上具有锗硅化物接触层的结构，其中锗硅化物接触层含有比下面的含Ge衬底更多的Si。

公开(公告)号：US07449782B2

公开(公告)日：2008-11-11

申请号：US10838378

申请日：2004-05-04

申请人： Cyril Cabral, Jr. ,  Roy A. Carruthers ,  Christophe Detavernier ,  Simon Gaudet ,  Christian Lavoie ,  Huiling Shang

发明人： Cyril Cabral, Jr. ,  Roy A. Carruthers ,  Christophe Detavernier ,  Simon Gaudet ,  Christian Lavoie ,  Huiling Shang

IPC分类号： H01L29/40

CPC分类号： H01L21/28525 ,  H01L21/28052 ,  H01L21/28518 ,  H01L29/665

摘要： A method for forming germano-silicide contacts atop a Ge-containing layer that is more resistant to etching than are conventional silicide contacts that are formed from a pure metal is provided. The method of the present invention includes first providing a structure which comprises a plurality of gate regions located atop a Ge-containing substrate having source/drain regions therein. After this step of the present invention, a Si-containing metal layer is formed atop the said Ge-containing substrate. In areas that are exposed, the Ge-containing substrate is in contact with the Si-containing metal layer. Annealing is then performed to form a germano-silicide compound in the regions in which the Si-containing metal layer and the Ge-containing substrate are in contact; and thereafter, any unreacted Si-containing metal layer is removed from the structure using a selective etch process. In some embodiments, an additional annealing step can follow the removal step. The method of the present invention provides a structure having a germano-silicide contact layer atop a Ge-containing substrate, wherein the germano-silicide contact layer contains more Si than the underlying Ge-containing substrate.

摘要翻译： 提供了一种形成锗硅化物的方法，该方法与由纯金属形成的常规硅化物接触相比更能抵抗蚀刻的含Ge层顶部接触。 本发明的方法包括首先提供一种结构，该结构包括位于其中具有源极/漏极区域的含Ge衬底顶部的多个栅极区域。 在本发明的该步骤之后，在所述含Ge基材上形成含Si金属层。 在暴露的区域中，含Ge衬底与含Si金属层接触。 然后进行退火以在含Si金属层和含Ge基板接触的区域中形成锗化硅化合物; 此后，使用选择性蚀刻工艺从结构中除去任何未反应的含Si金属层。 在一些实施方案中，附加的退火步骤可以跟随去除步骤。 本发明的方法提供了一种在含Ge衬底顶上具有锗硅化物接触层的结构，其中锗硅化物接触层含有比下面的含Ge衬底更多的Si。