公开(公告)号：US20120040519A1

公开(公告)日：2012-02-16

申请号：US13117722

申请日：2011-05-27

Applicant: Ching-Ting LEE

Inventor： Ching-Ting LEE

IPC: H01L21/205

CPC classification number: H01L21/02595 ,  C23C16/24 ,  C23C16/483 ,  C23C16/5096 ,  H01L21/02532 ,  H01L21/0262

Abstract: A method for forming a silicon film having a microcrystal structure is provided. The method includes following steps. A plasma-enhanced chemical vapor deposition system having a reaction chamber, a top electrode and a bottom electrode is provided. The top electrode and the bottom electrode are opposite and disposed in the reaction chamber. A substrate is disposed on the bottom electrode. A silane gas is applied into the reaction chamber. A silicon film having a microcrystal structure is formed by simultaneously irradiating the silane gas in the reaction chamber by a carbon dioxide laser and performing a plasma-enhanced chemical vapor deposition step.

Abstract translation: 提供了一种形成具有微晶结构的硅膜的方法。 该方法包括以下步骤。 提供了具有反应室，顶电极和底电极的等离子体增强化学气相沉积系统。 顶部电极和底部电极相对并设置在反应室中。 衬底设置在底部电极上。 将硅烷气体施加到反应室中。 通过二氧化碳激光器同时在反应室中照射硅烷气体并进行等离子体增强化学气相沉积步骤，形成具有微结晶结构的硅膜。