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公开(公告)号:US12070818B2
公开(公告)日:2024-08-27
申请号:US17234178
申请日:2021-04-19
Applicant: Ceramic Data Solution GmbH
Inventor: Martin Kunze , Christian Pflaum
IPC: G11B5/73 , B23K26/352 , B23K26/362 , B23K26/364 , C23C14/58 , C23C16/48 , C23C16/56
CPC classification number: B23K26/362 , B23K26/352 , B23K26/364 , C23C14/5813 , C23C14/582 , C23C14/5833 , C23C14/5853 , C23C14/5873 , C23C16/48 , C23C16/483 , C23C16/486 , C23C16/56 , G11B5/73921 , C23C16/487
Abstract: The present invention relates to an information storage medium and a method for long-term storage of information comprising the steps of: providing a ceramic substrate; coating the ceramic substrate with a layer of a second material different from the material of the ceramic substrate, the layer having a thickness no greater than 10 μm; tempering the coated ceramic substrate to form a writable plate or disc; encoding information on the writable plate or disc by using a laser and/or a focused particle beam to manipulate localized areas of the writable plate or disc.
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公开(公告)号:US20240006167A1
公开(公告)日:2024-01-04
申请号:US18213863
申请日:2023-06-25
Applicant: SEMES CO., LTD.
Inventor: Kwang Ryul KIM , Yunsang KIM
IPC: H01J37/32 , H01J37/22 , H01L21/67 , C23C16/455 , C23C16/48
CPC classification number: H01J37/32724 , H01J37/22 , H01L21/67115 , C23C16/45544 , C23C16/483
Abstract: Provided is a substrate processing module including a plurality of substrate processing apparatuses each including a process chamber having a processing space therein, a support unit for supporting a substrate in the processing space, a gas supply unit for supplying a process gas into the processing space, a plasma source for forming plasma from the process gas supplied into the processing space, and a laser unit for heating the substrate by irradiating a laser beam onto the substrate, wherein the substrate processing module further includes a laser beam generator for generating a laser beam, and a laser beam distribution unit for receiving the laser beam from the laser beam generator and distributing the laser beam to the laser units of the plurality of substrate processing apparatuses at time intervals.
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公开(公告)号:US11846024B2
公开(公告)日:2023-12-19
申请号:US17201815
申请日:2021-03-15
Applicant: Ohio State Innovation Foundation
Inventor: Hongping Zhao , Zhaoying Chen , Yuxuan Zhang
CPC classification number: C23C16/483 , C23C16/46 , H01L21/0254 , H01L21/0262 , H01L21/67023 , H01L21/67115 , H01L21/67207
Abstract: Disclosed herein are laser-assisted metal-organic chemical vapor deposition devices and methods of use thereof for suppressing background carbon incorporation.
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公开(公告)号:US11834739B2
公开(公告)日:2023-12-05
申请号:US17047015
申请日:2018-06-13
Applicant: Hewlett-Packard Development Company, L.P.
Inventor: Robert Ionescu , Helen A Holder , Ning Ge , Jarrid Wittkopf
IPC: C23C16/04 , C01B32/186 , C23C16/26 , C23C16/30 , C23C16/48
CPC classification number: C23C16/047 , C01B32/186 , C23C16/26 , C23C16/305 , C23C16/483 , C23C16/487
Abstract: Graphene printing is disclosed. A disclosed example graphene printing apparatus includes a gas source to cause a graphene precursor gas to flow across a surface of a substrate, and a localized heat source to locally heat portions of the surface to cause graphene to grow at the portions of the surface based on a printing pattern.
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公开(公告)号:US20230279542A1
公开(公告)日:2023-09-07
申请号:US17988978
申请日:2022-11-17
Applicant: Quantum Elements Development Inc.
Inventor: Christopher J. Nagel
IPC: C23C16/44 , C23C16/02 , C23C16/52 , C23C16/48 , C23C16/06 , C01B32/15 , C01B32/194 , C23C16/04 , C23C16/452 , C23C16/505
CPC classification number: C23C16/4417 , C01B32/15 , C01B32/194 , C23C16/0227 , C23C16/045 , C23C16/06 , C23C16/452 , C23C16/482 , C23C16/483 , C23C16/484 , C23C16/505 , C23C16/52 , B82Y30/00
Abstract: The invention includes apparatus and methods for instantiating and quantum printing materials, such as elemental metals, in a nanoporous carbon powder.
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公开(公告)号:US11680317B2
公开(公告)日:2023-06-20
申请号:US17723913
申请日:2022-04-19
Applicant: Quantum Elements Development Inc.
Inventor: Christopher J. Nagel
IPC: C23C16/04 , C23C16/44 , C23C16/02 , C23C16/52 , C23C16/48 , C23C16/06 , C01B32/15 , C01B32/194 , C23C16/452 , C23C16/505 , B82Y30/00 , B82Y40/00
CPC classification number: C23C16/4417 , C01B32/15 , C01B32/194 , C23C16/0227 , C23C16/045 , C23C16/06 , C23C16/452 , C23C16/482 , C23C16/483 , C23C16/484 , C23C16/505 , C23C16/52 , B82Y30/00 , B82Y40/00 , C01P2004/64 , C01P2006/16
Abstract: The invention includes apparatus and methods for instantiating and quantum printing materials, such as elemental metals, in a nanoporous carbon powder.
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公开(公告)号:US20170369998A1
公开(公告)日:2017-12-28
申请号:US15631243
申请日:2017-06-23
Applicant: FREE FORM FIBERS, LLC
Inventor: Joseph PEGNA , Erik G. VAALER , John L. SCHNEITER , Shay L. HARRISON , Ram K. GODUGUCHINTA , Kirk L. WILLIAMS
CPC classification number: C23C16/483 , B29C70/10 , B32B5/04 , B32B5/14 , B82Y30/00 , B82Y40/00 , C23C16/047 , C23C16/56
Abstract: Methods are provided for making a nanofiber-coated fiber. The method(s) include: providing a base fiber; depositing a nanofreckle on the base fiber; and growing a nanofiber at the nanofreckle. In another aspect, nanofiber-coated fibers are provided, produced by the above-noted methods making a nanofiber-coated fiber.
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公开(公告)号:US09842941B2
公开(公告)日:2017-12-12
申请号:US15216045
申请日:2016-07-21
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Shunpei Yamazaki
IPC: H01L29/78 , H01L29/786 , H01L29/26 , H01L29/66 , C23C16/455 , C23C16/48 , G06K19/07 , H01L27/105 , H01L27/12 , H01L29/24 , G02F1/1343 , G02F1/1362 , G02F1/1368 , H01L27/32
CPC classification number: H01L29/78696 , C23C16/45525 , C23C16/483 , G02F1/134309 , G02F1/136213 , G02F1/136286 , G02F1/1368 , G02F2201/123 , G06K19/0723 , H01L27/1052 , H01L27/1225 , H01L27/3262 , H01L29/24 , H01L29/26 , H01L29/66075 , H01L29/66969 , H01L29/78648 , H01L29/7869
Abstract: A transistor having high field-effect mobility is provided. A transistor having stable electrical characteristics is provided. A transistor having low off-state current (current in an off state) is provided. Alternatively, a semiconductor device including the transistor is provided. The semiconductor device includes a first insulating film, an oxide semiconductor film over the first insulating film, a second insulating film over the oxide semiconductor film, and a conductive film overlapping with the oxide semiconductor film with the first insulating film or the second insulating film provided between the oxide semiconductor film and the conductive film. The composition of the oxide semiconductor film changes continuously between the first insulating film and the second insulating film.
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公开(公告)号:US20170326838A1
公开(公告)日:2017-11-16
申请号:US15592408
申请日:2017-05-11
Applicant: FREE FORM FIBERS, LLC
Inventor: Joseph PEGNA , John L. SCHNEITER , Kirk L. WILLIAMS , Ram K. GODUGUCHINTA , Shay L. HARRISON
CPC classification number: B32B7/12 , B32B5/02 , B32B27/12 , B32B37/12 , B32B2250/02 , B32B2262/103 , B32B2262/106 , B32B2307/748 , B32B2405/00 , C23C16/483
Abstract: In one aspect, a fiber delivery assembly is provided including a backing tape and a single-filament fiber coupled to the backing tape. In another aspect, a method of making a fiber delivery assembly is provided, which includes: providing a backing tape; providing a single-filament fiber; and coupling the single-filament fiber to the backing tape.
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公开(公告)号:US09679779B2
公开(公告)日:2017-06-13
申请号:US13797549
申请日:2013-03-12
Applicant: The Aerospace Corporation
Inventor: David P. Taylor , Margaret H. Abraham
IPC: H01L21/285 , B81C1/00 , C23C16/01 , C23C16/18 , C23C16/48 , H01L21/3065 , C23C16/04 , C23C16/46 , H01L27/13 , H01L49/02 , G01J5/02 , G02B5/28
CPC classification number: H01L21/28506 , B81B2203/0109 , B81C1/00373 , B81C2201/0176 , B81C2201/0188 , C23C16/01 , C23C16/04 , C23C16/18 , C23C16/46 , C23C16/481 , C23C16/483 , G01J5/024 , G02B5/285 , H01L21/3065 , H01L27/13 , H01L28/40 , H01L28/87
Abstract: Embodiments of the present invention provide systems and methods for depositing materials on either side of a freestanding film using selectively thermally-assisted chemical vapor deposition (STA-CVD), and structures formed using same. A freestanding film, which is suspended over a cavity defined in a substrate, is exposed to a fluidic CVD precursor that reacts to form a solid material when exposed to heat. The freestanding film is then selectively heated in the presence of the precursor. The CVD precursor preferentially deposits on the surface(s) of the freestanding film.
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