公开(公告)号：US20080053518A1

公开(公告)日：2008-03-06

申请号：US11469918

申请日：2006-09-05

Applicant: Pen-Hsiu Chang ,  Hsin-Chun Lu ,  Ching-Ting Lee ,  Lain-Be Chang ,  Gwo-Mei Wu ,  Nai-Chuan Chen ,  An-Ping Chiu

Inventor： Pen-Hsiu Chang ,  Hsin-Chun Lu ,  Ching-Ting Lee ,  Lain-Be Chang ,  Gwo-Mei Wu ,  Nai-Chuan Chen ,  An-Ping Chiu

IPC: H01L31/00

CPC classification number: H01L31/022466 ,  H01L31/072 ,  Y02B10/10 ,  Y02E10/50

Abstract: The present invention discloses a transparent solar cell system, which comprises: a light-permeable solar energy conversion device, balance units and conductive wires. The light-permeable solar energy conversion device has a transparent photovoltaic element, which is a PN semiconductor structure formed of two transparent conductive films. The transparent conductive films are respectively made of different oxides. The substrate of the transparent solar cell system is made of a common glass or a common plastic; therefore, the transparent solar cell system of the present invention is lightweight and environment-friendly. Further, the present invention has a simple fabrication process and a low fabrication cost; therefore, the present invention can be extensively applied to the windows and doors of buildings and vehicles and benefits the popularization of solar energy.

Abstract translation: 本发明公开了一种透明太阳能电池系统，其特征在于，包括：透光太阳能转换装置，平衡单元和导电线。 透光太阳能转换装置具有由两个透明导电膜形成的PN半导体结构的透明光电元件。 透明导电膜分别由不同的氧化物制成。 透明太阳能电池系统的基板由普通玻璃或普通塑料制成; 因此，本发明的透明太阳能电池系统是轻质且环境友好的。 此外，本发明具有简单的制造工艺和低制造成本; 因此，本发明可以广泛地应用于建筑物和车辆的门窗，并且有利于太阳能的普及。

公开(公告)号：US06531383B1

公开(公告)日：2003-03-11

申请号：US09671946

申请日：2000-09-27

Applicant: Ching-ting Lee

Inventor： Ching-ting Lee

IPC: H01L2128

CPC classification number: H01L33/40 ,  H01L21/28575 ,  H01L33/007 ,  H01S5/32341

Abstract: The invention provides a method for manufacturing a gallium nitride-based III-V group compound semiconductor device, which comprises the following steps: forming a semiconductor stacked structure over a substrate, wherein the semiconductor stacked structure comprises an n-type semiconductor layer, an active layer, and a p-type semiconductor layer; etching the semiconductor stacked structure to expose a part of the n-type semiconductor layer; forming a first electrode on the n-type semiconductor layer, wherein the first electrode comprises an ohmic contact layer, a barrier layer, and a pad layer; performing an annealing process to lower the contact resistance between the first electrode and the n-type semiconductor layer and activate the p-type semiconductor layer at the same time; and forming a second electrode on the p-type semiconductor layer.

Abstract translation: 本发明提供了一种用于制造氮化镓基III-V族化合物半导体器件的方法，其包括以下步骤：在衬底上形成半导体层叠结构，其中半导体堆叠结构包括n型半导体层，活性 层和p型半导体层; 蚀刻所述半导体层叠结构以暴露所述n型半导体层的一部分; 在所述n型半导体层上形成第一电极，其中所述第一电极包括欧姆接触层，阻挡层和焊盘层; 执行退火处理以降低第一电极和n型半导体层之间的接触电阻并同时激活p型半导体层; 以及在所述p型半导体层上形成第二电极。

公开(公告)号：US06486050B1

公开(公告)日：2002-11-26

申请号：US10159302

申请日：2002-05-31

Applicant: Ching-ting Lee

Inventor： Ching-ting Lee

IPC: H01L2128

CPC classification number: H01L21/28575 ,  H01L21/246

Abstract: A method for manufacturing III-nitride semiconductor devices is disclosed. The method employs oxidation and sulfurated treatment to reduce the specific contact resistance between metal and p-type III-nitride semiconductors. The method includes surface treatment of p-type III-nitride semiconductors using (NH4)2Sx solution to remove the native oxide from their surface; evaporating metal layer onto the surface-treated p-type III-nitride semiconductors; and then alloy processing the metals and the p-type III-nitride semiconductor with thermal alloy treatment. The method may further include a pre-oxidation step prior to the sulfurated treatment. In this way, ohmic contact can be formed between the metal layer and the p-type III-nitride semiconductors.

Abstract translation: 公开了一种用于制造III族氮化物半导体器件的方法。 该方法采用氧化和硫化处理来降低金属和p型III族氮化物半导体之间的比接触电阻。 该方法包括使用（NH4）2Sx溶液对p型III族氮化物半导体进行表面处理以从其表面去除天然氧化物; 蒸发金属层到表面处理的p型III族氮化物半导体上; 然后通过热合金处理合金加工金属和p型III族氮化物半导体。 该方法还可以包括在硫化处理之前的预氧化步骤。 以这种方式，可以在金属层和p型III族氮化物半导体之间形成欧姆接触。

公开(公告)号：US20120040519A1

公开(公告)日：2012-02-16

申请号：US13117722

申请日：2011-05-27

Applicant: Ching-Ting LEE

Inventor： Ching-Ting LEE

IPC: H01L21/205

CPC classification number: H01L21/02595 ,  C23C16/24 ,  C23C16/483 ,  C23C16/5096 ,  H01L21/02532 ,  H01L21/0262

Abstract: A method for forming a silicon film having a microcrystal structure is provided. The method includes following steps. A plasma-enhanced chemical vapor deposition system having a reaction chamber, a top electrode and a bottom electrode is provided. The top electrode and the bottom electrode are opposite and disposed in the reaction chamber. A substrate is disposed on the bottom electrode. A silane gas is applied into the reaction chamber. A silicon film having a microcrystal structure is formed by simultaneously irradiating the silane gas in the reaction chamber by a carbon dioxide laser and performing a plasma-enhanced chemical vapor deposition step.

Abstract translation: 提供了一种形成具有微晶结构的硅膜的方法。 该方法包括以下步骤。 提供了具有反应室，顶电极和底电极的等离子体增强化学气相沉积系统。 顶部电极和底部电极相对并设置在反应室中。 衬底设置在底部电极上。 将硅烷气体施加到反应室中。 通过二氧化碳激光器同时在反应室中照射硅烷气体并进行等离子体增强化学气相沉积步骤，形成具有微结晶结构的硅膜。

公开(公告)号：US06219475B1

公开(公告)日：2001-04-17

申请号：US09293888

申请日：1999-04-19

Applicant: Ching-Ting Lee

Inventor： Ching-Ting Lee

IPC: G02B626

CPC classification number: G01M11/331 ,  G02B6/125 ,  G02B2006/12119 ,  G02B2006/12183

Abstract: The device concerns measuring the propagation and bending losses that take place in the individual mode of the multi-mode waveguide. The method applied is a new one comprising butt-couple and prism-couple together with phase-modulation method. Electrodes are made on the waveguide, and applied with voltage. The electro-optical effect is used to modulate the effective length of the waveguide in forming a Fabry-Perot etalon. From here, the contrast of the butt-couple's output and the loss can be measured. At the same time, as the prism-couple is able to separate the multiple modes individually, and measure the contrast and loss of each mode through every output mode which are then compared with the butt-couple, each mode's propagation and bending losses values of the multi-mode waveguide can be derived.

Abstract translation: 该装置涉及测量在多模波导的单独模式中发生的传播和弯曲损耗。 应用的方法是包括对接和棱镜耦合以及相位调制方法的新方法。 电极在波导上制成，并施加电压。 电光效应用于在形成法布里 - 珀罗标准具时调制波导的有效长度。 从这里，可以测量对夫妇的产出和损失的对比。 同时，由于棱镜对能够单独分离多个模式，并且通过每个输出模式测量每个模式的对比度和损耗，然后将其与对接进行比较，每个模式的传播和弯曲损耗值 可以导出多模波导。