公开(公告)号：US20240099168A1

公开(公告)日：2024-03-21

申请号：US18467653

申请日：2023-09-14

申请人： Commissariat à I'Énergie Atomique et aux Énergies Alternatives

发明人： Gabriele Navarro ,  Guillaume Bourgeois ,  Marie-Claire Cyrille

IPC分类号： H10N70/00 ,  H10B63/10 ,  H10N70/20

CPC分类号： H10N70/8616 ,  H10B63/10 ,  H10N70/011 ,  H10N70/231 ,  H10N70/8413

摘要： A phase change memory cell including: a first layer in a phase change material; a heating element located under the first layer; a second insulating layer coating a side of the heating element; and first stack comprising a third encapsulation layer coating the side faces of the second layer and a fourth encapsulation layer coating the third layer and being in a material having a lower density than that of the material of the third layer.

公开(公告)号：US20240099164A1

公开(公告)日：2024-03-21

申请号：US18467640

申请日：2023-09-14

申请人： Commissariat à I'Énergie Atomique et aux Énergies Alternatives

发明人： Gabriele Navarro ,  Guillaume Bourgeois ,  Marie-Claire Cyrille

IPC分类号： H10N70/20 ,  H10B63/00 ,  H10N70/00

CPC分类号： H10N70/231 ,  H10B63/30 ,  H10N70/021 ,  H10N70/8413 ,  H10N70/8613 ,  H10N70/883 ,  H10N70/8845

摘要： A phase change memory cell including: a first layer in a phase change material; a heating element located under the first layer; a second insulating layer coating a side of the heating element; and a third insulating layer interposed between the first and second layers, in a material having a density higher than that of the material of the second layer.