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公开(公告)号：US20240203731A1
公开(公告)日：2024-06-20
申请号：US18537875
申请日：2023-12-13
发明人： Rémy Gassilloud , Julien Patouillard , Bérangére Hyot , Amélie Dussaigne , Stéphane Cadot , Matthew Charles , François Martin , Nicolas Gauthier , Christine Raynaud
IPC分类号： H01L21/02
CPC分类号： H01L21/0254 , H01L21/02529 , H01L21/02568 , H01L21/02581 , H01L21/02631 , H01L21/02664
摘要： A method including the following successive steps: a) forming, on a surface of a support substrate, a first layer made of a material selected from among a lamellar dichalcogenide or a lamellar chalcogenide including a stack of sheets; b) forming, by physical vapor deposition on the side of said surface of the support substrate, a second layer made of a first III-N semiconductor material coating the first layer; and c) carrying out a thermo-chemical treatment of the first layer resulting, in the first layer, in a conversion of van der Waals bonds between the sheets of the first layer into covalent bonds.
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公开(公告)号：US20240201015A1
公开(公告)日：2024-06-20
申请号：US18537880
申请日：2023-12-13
发明人： François Deneuville
IPC分类号： G01J4/04
CPC分类号： G01J4/04
摘要： A polarimetric image sensor formed inside and on top of a semiconductor substrate, the sensor including: —a plurality of pixels, each comprising a photodetector formed in the semiconductor substrate; —a polarizing filter arranged on the side of an illumination surface of the photodetectors, the filter including, for each pixel, a polarizing structure; and—a polarization router comprising a two-dimensional metasurface arranged on the side of the polarizing filter opposite to the photodetectors, the metasurface including a two-dimensional array of pads.
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3.发明公开公开(公告)号：US20230325659A1
公开(公告)日：2023-10-12
申请号：US18024242
申请日：2021-09-08
申请人： Commissariat à I'Énergie Atomique et aux Énergies Alternatives , Universite Grenoble Alpes , Centre National de la Recherche Scientifique , Université de Chambéry - Université Savoie Mont Blanc
IPC分类号： G06N3/08
CPC分类号： G06N3/08
摘要： A method of training an artificial neural network, the method comprising: initially training a first artificial neural network with first input data and first pseudo data, wherein the first pseudo data is or was generated by a second artificial neural network in a virgin state, or by the first artificial neural network while in a virgin state; generating second pseudo data using the first artificial neural network, or using the second artificial neural network following at least partially transferring knowledge from the first artificial neural network to the second artificial neural network; and training the first artificial neural network, or another artificial neural network, with the second pseudo data and second input data.
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公开(公告)号：US20230275116A1
公开(公告)日：2023-08-31
申请号：US18015936
申请日：2020-07-16
发明人： Corentin Le Maoult , David Vaufrey
CPC分类号： H01L27/156 , H01L33/06 , H01L33/0095 , H01L33/26
摘要： A light-emitting diode manufacturing method, including the successive steps of: a) forming an active layer including a stack of multiple quantum wells, each quantum well including a layer made of a semiconductor alloy; b) forming a trench for singularizing the diode, the trench crossing the active layer; and c) applying to the sides of the active layer, at the level of the lateral walls of the trench, a chemical treatment capable of etching a first component of the semiconductor alloy selectively over at least another component of the semiconductor alloy, wherein the bandgap width of the semiconductor alloy is a function of the concentration of the first component in the alloy.
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5.发明公开公开(公告)号：US20230200248A1
公开(公告)日：2023-06-22
申请号：US18067853
申请日：2022-12-19
CPC分类号： H10N30/40 , H10N30/804 , H02M3/33569
摘要： The electrical energy conversion system comprises:
a converter including E first switching assembly or assemblies, each associated with an input voltage and including two first switches; N second switching assembly or assemblies, each associated with an output voltage and including two second switches; and at least one piezoelectric assembly connected to a switch; E>1, N>1;
a control device configured for controlling, during a resonance cycle, a switching of the switches so as to alternate phases at constant voltage and phases at constant load across said piezoelectric assembly or assemblies.
The converter comprising an electrical transformer having a primary winding connected to a first switching assembly and a secondary winding connected to a second switching assembly, and each piezoelectric assembly being connected between a switch and a winding.-
公开(公告)号：US20230197885A1
公开(公告)日：2023-06-22
申请号：US17996240
申请日：2021-04-13
申请人： CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE , UNIVERSITE GRENOBLE ALPES , COMMISSARIAT À I'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES
发明人： Julien PERNOT , Gwenole JACOPIN , Bruno DAUDIN
IPC分类号： H01L33/00
CPC分类号： H01L33/0075 , H01L33/0093 , H01L33/007 , H01L33/0012
摘要： The invention relates to a method for manufacturing a transmitter device (10) comprising the steps of:
providing of a substrate (70) made of a semiconductor material having a first face (85) defining the substrate (70) in a direction (N) normal to the first face (85),
implanting, through the first face (85), atoms capable of forming a weakened portion in the substrate, the substrate (70) further comprising a surface portion (92) and an internal portion (95), the weakened portion (90) separating the surface portion (92) from the internal portion (95) in the normal direction (N),
forming, on the first face (85), a light-emitting diode (20),
bonding a face (150) of the diode (20) to a second face (155) of a support (15), and
breaking the weakened portion (90) in order to separate the surface portion (92) from the internal portion (95).-
公开(公告)号：US20220393026A1
公开(公告)日：2022-12-08
申请号：US17826706
申请日：2022-05-27
发明人： René Escoffier , Blend Mohamad
IPC分类号： H01L29/778 , H01L29/20 , H01L29/66 , H01L29/40 , H01L29/78
摘要： An electronic device including semiconductor region located on a gallium nitride layer, two electrodes, located on either side of and insulated from the semiconductor region, the electrodes partially penetrating into the gallium nitride layer, and two lateral MOS transistors formed inside and on top of the semiconductor region.
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公开(公告)号：US20220359782A1
公开(公告)日：2022-11-10
申请号：US17619820
申请日：2020-06-25
申请人： Aledia , Commissariat à I'Énergie Atomique et aux Énergies Alternatives , Universite Grenoble Alpes
摘要： A method of manufacturing an optoelectronic device including-light-emitting diodes comprising the forming of three-dimensional semiconductor elements made of a III-V compound, each comprising a lower portion and an upper portion and, for each semiconductor element, the forming of an active area covering the top of the upper portion and the forming of at least one semiconductor area of the III-V compound covering the active area. The upper portions are formed by vapor deposition at a pressure lower than 1.33 mPa.
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公开(公告)号：US20220271134A1
公开(公告)日：2022-08-25
申请号：US17668198
申请日：2022-02-09
发明人： Blend Mohamad , René Escoffier
IPC分类号： H01L29/423 , H01L29/66 , H01L29/778 , H01L29/40
摘要： A transistor comprising a gallium nitride layer having a first gate electrode partially penetrating into it, having: a first side coated with a first thickness of a first insulating material and of a second insulating material; and with a second thickness of a conductive material; and a bottom coated with a third thickness, smaller than the first thickness, of the first insulating material.
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公开(公告)号：US11410978B2
公开(公告)日：2022-08-09
申请号：US16762090
申请日：2018-11-06
发明人： Hubert Bono , Julia Simon
摘要： A method of manufacturing an optoelectronic device, including: a) transferring, onto a surface of a control circuit, a diode stack including first and second semiconductor layers of opposite conductivity types, so that the second layer is electrically connected to metal pads of the control circuit; b) forming in the active stack trenches delimiting a plurality of diodes connected to separate metal pads of the control circuit; c) depositing an insulating layer on the lateral walls of the trenches; d) partially removing the insulating layer to expose the sides of the portions of the first layer delimited by the trenches; and e) forming a metallization coating the lateral walls and the bottom of the trenches and contacting the sides of the portions of the first layer delimited by the trenches.
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