公开(公告)号：US20140110802A1

公开(公告)日：2014-04-24

申请号：US13657708

申请日：2012-10-22

Applicant: CROCUS TECHNOLOGY, INC.,

Inventor： Neal Berger ,  Mourad El Baraji ,  Amitay Levi

IPC: H01L29/82

CPC classification number: H01L27/222 ,  G11C11/16 ,  G11C11/1673 ,  G11C11/1675 ,  H01L23/5226 ,  H01L23/528 ,  H01L29/82 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A memory device includes a magnetic layer including a plurality of magnetic random access memory (MRAM) cells, a first conductive layer, a layer including a strap connecting MRAM cells included in the plurality of MRAM cells, and a second conductive layer. The first conductive layer includes a conductive portion electrically connected to at least one of the plurality of MRAM cells, and a field line configured to write data to the at least one of the plurality of MRAM cells. The second conductive layer includes a conductive interconnect electrically connected to the at least one of the plurality of MRAM cells, where the magnetic layer is disposed between the first conductive layer and the second conductive layer. At least one of the plurality of MRAM cells is directly attached to the second conductive layer and the strap.

Abstract translation: 存储器件包括包括多个磁随机存取存储器（MRAM）单元的磁性层，第一导电层，包括连接多个MRAM单元中包括的MRAM单元的带的层和第二导电层。 第一导电层包括电连接到多个MRAM单元中的至少一个的导电部分，以及被配置为将数据写入多个MRAM单元中的至少一个的场线。 第二导电层包括电连接到多个MRAM单元中的至少一个MRAM单元的导电互连，其中磁性层设置在第一导电层和第二导电层之间。 多个MRAM单元中的至少一个直接附接到第二导电层和带。

公开(公告)号：US08816455B2

公开(公告)日：2014-08-26

申请号：US13657708

申请日：2012-10-22

Applicant: Crocus Technology, Inc.

Inventor： Neal Berger ,  Mourad El Baraji ,  Amitay Levi

IPC: H01L29/82

CPC classification number: H01L27/222 ,  G11C11/16 ,  G11C11/1673 ,  G11C11/1675 ,  H01L23/5226 ,  H01L23/528 ,  H01L29/82 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A memory device includes a magnetic layer including a plurality of magnetic random access memory (MRAM) cells, a first conductive layer, a layer including a strap connecting MRAM cells included in the plurality of MRAM cells, and a second conductive layer. The first conductive layer includes a conductive portion electrically connected to at least one of the plurality of MRAM cells, and a field line configured to write data to the at least one of the plurality of MRAM cells. The second conductive layer includes a conductive interconnect electrically connected to the at least one of the plurality of MRAM cells, where the magnetic layer is disposed between the first conductive layer and the second conductive layer. At least one of the plurality of MRAM cells is directly attached to the second conductive layer and the strap.

Abstract translation: 存储器件包括包括多个磁随机存取存储器（MRAM）单元的磁性层，第一导电层，包括连接多个MRAM单元中包括的MRAM单元的带的层和第二导电层。 第一导电层包括电连接到多个MRAM单元中的至少一个的导电部分，以及被配置为将数据写入多个MRAM单元中的至少一个的场线。 第二导电层包括电连接到多个MRAM单元中的至少一个MRAM单元的导电互连，其中磁性层设置在第一导电层和第二导电层之间。 多个MRAM单元中的至少一个直接附接到第二导电层和带。

公开(公告)号：US09054029B2

公开(公告)日：2015-06-09

申请号：US14468234

申请日：2014-08-25

Applicant: Crocus Technology Inc.

Inventor： Neal Berger ,  Mourad El Baraji ,  Amitay Levi

IPC: H01L27/22 ,  H01L29/82 ,  G11C11/16 ,  H01L23/522 ,  H01L23/528

CPC classification number: H01L27/222 ,  G11C11/16 ,  G11C11/1673 ,  G11C11/1675 ,  H01L23/5226 ,  H01L23/528 ,  H01L29/82 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A memory device includes a magnetic layer including a plurality of magnetic random access memory (MRAM) cells, a first conductive layer, a layer including a strap connecting MRAM cells included in the plurality of MRAM cells, and a second conductive layer. The first conductive layer includes a conductive portion electrically connected to at least one of the plurality of MRAM cells, and a field line configured to write data to the at least one of the plurality of MRAM cells. The second conductive layer includes a conductive interconnect electrically connected to the at least one of the plurality of MRAM cells, where the magnetic layer is disposed between the first conductive layer and the second conductive layer. At least one of the plurality of MRAM cells is directly attached to the second conductive layer and the strap.

Abstract translation: 存储器件包括包括多个磁随机存取存储器（MRAM）单元的磁性层，第一导电层，包括连接多个MRAM单元中包括的MRAM单元的带的层和第二导电层。 第一导电层包括电连接到多个MRAM单元中的至少一个的导电部分，以及被配置为将数据写入多个MRAM单元中的至少一个的场线。 第二导电层包括电连接到多个MRAM单元中的至少一个MRAM单元的导电互连，其中磁性层设置在第一导电层和第二导电层之间。 多个MRAM单元中的至少一个直接附接到第二导电层和带。

公开(公告)号：US20140361392A1

公开(公告)日：2014-12-11

申请号：US14468234

申请日：2014-08-25

Applicant: Crocus Technology Inc.

Inventor： Neal Berger ,  Mourad El Baraji ,  Amitay Levi

IPC: H01L27/22 ,  H01L23/528 ,  H01L23/522

CPC classification number: H01L27/222 ,  G11C11/16 ,  G11C11/1673 ,  G11C11/1675 ,  H01L23/5226 ,  H01L23/528 ,  H01L29/82 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A memory device includes a magnetic layer including a plurality of magnetic random access memory (MRAM) cells, a first conductive layer, a layer including a strap connecting MRAM cells included in the plurality of MRAM cells, and a second conductive layer. The first conductive layer includes a conductive portion electrically connected to at least one of the plurality of MRAM cells, and a field line configured to write data to the at least one of the plurality of MRAM cells. The second conductive layer includes a conductive interconnect electrically connected to the at least one of the plurality of MRAM cells, where the magnetic layer is disposed between the first conductive layer and the second conductive layer. At least one of the plurality of MRAM cells is directly attached to the second conductive layer and the strap.

Abstract translation: 存储器件包括包括多个磁随机存取存储器（MRAM）单元的磁性层，第一导电层，包括连接多个MRAM单元中包括的MRAM单元的带的层和第二导电层。 第一导电层包括电连接到多个MRAM单元中的至少一个的导电部分，以及被配置为将数据写入多个MRAM单元中的至少一个的场线。 第二导电层包括电连接到多个MRAM单元中的至少一个MRAM单元的导电互连，其中磁性层设置在第一导电层和第二导电层之间。 多个MRAM单元中的至少一个直接附接到第二导电层和带。