公开(公告)号：US20230125063A1

公开(公告)日：2023-04-20

申请号：US18065916

申请日：2022-12-14

Applicant: DENSO CORPORATION

Inventor： Seiji NOMA ,  Tomofusa SHIGA ,  Kouji SENDA ,  Tsuyoshi NISHIWAKI ,  Yuta FURUMURA ,  Akitaka SOENO

IPC: H01L29/47 ,  H01L27/06 ,  H01L29/739 ,  H01L29/872 ,  H01L29/40

Abstract: A semiconductor device includes a semiconductor substrate and a metal film. The metal film is located on the semiconductor substrate. The metal film includes a portion to have a Schottky junction with the semiconductor substrate. The metal film is made of an aluminum alloy in which an element is added to aluminum. The metal film includes a lower metal layer and an upper metal layer. The lower metal layer is located on the semiconductor substrate. The upper metal layer stacks on the lower metal layer. The lower metal layer has a thickness of 2.6 micrometers or less in a stacking direction of the lower metal layer and the upper metal layer.