SWITCHING DEVICE
    1.
    发明申请
    SWITCHING DEVICE 审中-公开

    公开(公告)号:US20170213907A1

    公开(公告)日:2017-07-27

    申请号:US15313448

    申请日:2015-06-03

    Abstract: High voltage-resistance of a switching device including a p-type region being in contact with a lower end of a bottom-insulating-layer is realized. The switching device includes a bottom-insulating-layer disposed at a bottom in a trench, and a gate electrode disposed on a front surface side of the bottom-insulating-layer. A semiconductor substrate includes a first n-type and p-type regions being in contact with the gate insulating film, a second p-type region being in contact with an end of the bottom-insulating-layer, and a second n-type region separating the second p-type region from the first p-type region. Distance A from a rear-surface-side-end of the first p-type region to a front-surface-side-end of the second p-type region, and distance B from a rear-surface-side-end of the-bottom-insulating layer to a rear-surface-side-end of the second p-type region satisfy A

    SEMICONDUCTOR DEVICE WITH SCHOTTKY BARRIER DIODE
    6.
    发明申请
    SEMICONDUCTOR DEVICE WITH SCHOTTKY BARRIER DIODE 审中-公开
    具有肖特基二极管的半导体器件

    公开(公告)号:US20140175508A1

    公开(公告)日:2014-06-26

    申请号:US14138456

    申请日:2013-12-23

    Abstract: A semiconductor device includes a first conductivity-type drift region including an exposed portion, a plurality of second conductivity-type body regions, a first conductivity-type source region, a gate portion and a Schottky electrode. The drift region is defined in a semiconductor layer, and the exposed portion exposes on a surface of the semiconductor layer. The body regions are disposed on opposite sides of the exposed portion. The source region is separated from the drift region by the body region. The gate portion is disposed to oppose the body region. The exposed portion is formed with a groove, and the Schottky electrode is disposed in the groove. The Schottky electrode has a Schottky contact with the exposed portion.

    Abstract translation: 半导体器件包括:第一导电型漂移区,包括暴露部分,多个第二导电型体区,第一导电型源区,栅极部和肖特基电极。 漂移区被限定在半导体层中,并且暴露部分暴露在半导体层的表面上。 主体区域设置在暴露部分的相对侧上。 源区域通过身体区域与漂移区域分离。 门部分设置成与身体区域相对。 暴露部分形成有凹槽,并且肖特基电极设置在凹槽中。 肖特基电极与暴露部分具有肖特基接触。

    SILICON CARBIDE SEMICONDUCTOR DEVICE
    8.
    发明申请
    SILICON CARBIDE SEMICONDUCTOR DEVICE 审中-公开
    硅碳化硅半导体器件

    公开(公告)号:US20150333127A1

    公开(公告)日:2015-11-19

    申请号:US14652483

    申请日:2013-12-19

    Abstract: A silicon carbide semiconductor device includes: an element isolation layer and an electric field relaxation layer. The element isolation layer is arranged, from the surface of a base region to be deeper than the base region, between a main cell region and a sense cell region, and isolates the main cell region from the sense cell region. The electric field relaxation layer is arranged from a bottom of the base region to be deeper than the element isolation layer. The electric field relaxation layer is divided into a main cell region portion and a sense cell region portion. At least a part of the element isolation layer is arranged inside of a division portion of the electric field relaxation layer.

    Abstract translation: 碳化硅半导体器件包括:元件隔离层和电场弛豫层。 元件隔离层从基区的表面配置为比基区更深,位于主单元区域和感测单元区域之间,并且将主单元区域与感测单元区域隔离。 电场弛豫层从基底区域的底部排列成比元件隔离层更深。 电场弛豫层被分成主单元区域部分和感测单元区域部分。 元件隔离层的至少一部分布置在电场弛豫层的分割部分的内部。

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