公开(公告)号：US20160201215A1

公开(公告)日：2016-07-14

申请号：US14916055

申请日：2014-09-03

Applicant: DEXERIALS CORPORATION

Inventor： Makoto WATANABE ,  Shinya AKIYAMA ,  Tatsuya MATSUMOTO

IPC: C30B9/00 ,  C30B29/40 ,  C30B19/04

CPC classification number: C30B19/04 ,  C01B21/0632 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2004/61 ,  C30B9/00 ,  C30B9/06 ,  C30B17/00 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02628

Abstract: [Object] To provide a production method capable of producing a gallium nitride crystal at a lower pressure.[Solution] Provided is a method for producing a gallium nitride crystal, the method including a step of heating metal gallium and iron nitride in a nitrogen atmosphere at least to a reaction temperature at which the metal gallium and the iron nitride react.

Abstract translation: 本发明提供能够在较低压力下制造氮化镓晶体的制造方法。 [方案]提供了一种制造氮化镓晶体的方法，该方法包括在氮气气氛中至少加热金属镓和氮化铁反应的反应温度下加热金属镓和氮化铁的步骤。