公开(公告)号：US20140323044A1

公开(公告)日：2014-10-30

申请号：US14329029

申请日：2014-07-11

Applicant: DEXERIALS CORPORATION

Inventor： Masayoshi KANNO ,  Kazutaka HABU ,  Makoto WATANABE ,  Toshiaki YOKOTA

IPC: H04B5/00

CPC classification number: H04B5/0012 ,  H02J5/005 ,  H02J50/12

Abstract: A contactless receiver is provided with a receiving section and a rectification section. The receiving section has a resonant circuit including a resonant capacitor having a variable capacitance element formed with a ferroelectric material, a capacitance of the variable capacitance element changing according to a received voltage at a predetermined frequency, and a resonance coil connected to the resonant capacitor. The rectification section converts an alternating current voltage output from the receiving section into a direct current voltage.

Abstract translation: 非接触式接收器设置有接收部分和整流部分。 接收部具有包括谐振电容器的谐振电路，谐振电容器具有由铁电材料形成的可变电容元件，可变电容元件根据预定频率的接收电压而变化的电容以及连接到谐振电容器的谐振线圈。 整流部将从接收部输出的交流电压转换为直流电压。

公开(公告)号：US20210285124A1

公开(公告)日：2021-09-16

申请号：US16328427

申请日：2017-09-04

Applicant: DEXERIALS CORPORATION

Inventor： Shinya AKIYAMA ,  Makoto WATANABE

IPC: C30B19/12 ,  C30B29/40

Abstract: There is provided a method for producing a gallium nitride crystal that can produce a gallium nitride crystal more efficiently, using liquid phase growth, the method for producing a gallium nitride crystal including: a step of adding at least one or more of a nitride of an alkali metal or an alkaline earth metal and a transition metal to metal gallium and iron nitride and performing heating in a nitrogen atmosphere to at least a reaction temperature at which the metal gallium reacts.

公开(公告)号：US20160201215A1

公开(公告)日：2016-07-14

申请号：US14916055

申请日：2014-09-03

Applicant: DEXERIALS CORPORATION

Inventor： Makoto WATANABE ,  Shinya AKIYAMA ,  Tatsuya MATSUMOTO

IPC: C30B9/00 ,  C30B29/40 ,  C30B19/04

CPC classification number: C30B19/04 ,  C01B21/0632 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2004/61 ,  C30B9/00 ,  C30B9/06 ,  C30B17/00 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02628

Abstract: [Object] To provide a production method capable of producing a gallium nitride crystal at a lower pressure.[Solution] Provided is a method for producing a gallium nitride crystal, the method including a step of heating metal gallium and iron nitride in a nitrogen atmosphere at least to a reaction temperature at which the metal gallium and the iron nitride react.

Abstract translation: 本发明提供能够在较低压力下制造氮化镓晶体的制造方法。 [方案]提供了一种制造氮化镓晶体的方法，该方法包括在氮气气氛中至少加热金属镓和氮化铁反应的反应温度下加热金属镓和氮化铁的步骤。

公开(公告)号：US20190218684A1

公开(公告)日：2019-07-18

申请号：US16324691

申请日：2017-09-06

Applicant: DEXERIALS CORPORATION

Inventor： Makoto WATANABE ,  Shinya AKIYAMA

IPC: C30B19/04 ,  C30B29/40 ,  H01L21/02

CPC classification number: C30B19/04 ,  C30B29/38 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02625 ,  H01L21/208

Abstract: There is provided a new and improved method for producing a gallium nitride stacked body that can produce a single-crystal layer with few crystal defects, the method including: an intermediate layer formation step of forming an intermediate layer (12) of gallium nitride with random crystal orientations on a substrate (11); and a single-crystal layer formation step of forming a single-crystal layer (13) of gallium nitride on the intermediate layer (12) by a liquid phase epitaxial growth method. Also the intermediate layer (12) may be formed by a liquid phase epitaxial growth method.

公开(公告)号：US20140247097A1

公开(公告)日：2014-09-04

申请号：US14251191

申请日：2014-04-11

Applicant: DEXERIALS CORPORATION

Inventor： Masayoshi KANNO ,  Toshiaki YOKOTA ,  Kazutaka HABU ,  Makoto WATANABE ,  Noritaka SATO

IPC: H03H7/01 ,  H01G7/00

CPC classification number: H03H7/0115 ,  H01G4/232 ,  H01G4/255 ,  H01G4/30 ,  H01G7/06 ,  H03H2001/0085

Abstract: To suppress changes in capacitance due to displacement between electrodes opposing each other across a dielectric layer, thereby allowing stable manufacturing of a capacitance device having a desired capacitance.The capacitance device according to the present invention is of a configuration including a dielectric layer (10), a first electrode (11) formed on a predetermined surface (10a) of the dielectric layer (10), and a second electrode (12) formed on a surface (10b) on the opposite side of the dielectric layer (10) from the predetermined surface (10a). The forms of the first and second electrodes (11, 12) are set so that even in the event that the first electrode (11) is relatively displaced regarding position in a predetermined direction as to the second electrode (12), the area of the opposing-electrode region between the first electrode (11) and to the second electrode (12) is unchanged.

Abstract translation: 为了抑制由电介质层彼此相对的电极之间的位移引起的电容变化，从而允许具有期望电容的电容器件的稳定制造。 根据本发明的静电电容器件具有包括电介质层（10），形成在电介质层（10）的预定表面（10a）上的第一电极（11））和形成的第二电极（12） 在与所述预定表面（10a）相对的所述电介质层（10）的相对侧上的表面（10b）上。 第一和第二电极（11,12）的形状被设定为使得即使在第一电极（11）相对于第二电极（12）在预定方向上的位置相对位移的情况下， 第一电极（11）与第二电极（12）之间的对置电极区域不变。