公开(公告)号：US20160201215A1

公开(公告)日：2016-07-14

申请号：US14916055

申请日：2014-09-03

Applicant: DEXERIALS CORPORATION

Inventor： Makoto WATANABE ,  Shinya AKIYAMA ,  Tatsuya MATSUMOTO

IPC: C30B9/00 ,  C30B29/40 ,  C30B19/04

CPC classification number: C30B19/04 ,  C01B21/0632 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2004/61 ,  C30B9/00 ,  C30B9/06 ,  C30B17/00 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02628

Abstract: [Object] To provide a production method capable of producing a gallium nitride crystal at a lower pressure.[Solution] Provided is a method for producing a gallium nitride crystal, the method including a step of heating metal gallium and iron nitride in a nitrogen atmosphere at least to a reaction temperature at which the metal gallium and the iron nitride react.

Abstract translation: 本发明提供能够在较低压力下制造氮化镓晶体的制造方法。 [方案]提供了一种制造氮化镓晶体的方法，该方法包括在氮气气氛中至少加热金属镓和氮化铁反应的反应温度下加热金属镓和氮化铁的步骤。

公开(公告)号：US20210285124A1

公开(公告)日：2021-09-16

申请号：US16328427

申请日：2017-09-04

Applicant: DEXERIALS CORPORATION

Inventor： Shinya AKIYAMA ,  Makoto WATANABE

IPC: C30B19/12 ,  C30B29/40

Abstract: There is provided a method for producing a gallium nitride crystal that can produce a gallium nitride crystal more efficiently, using liquid phase growth, the method for producing a gallium nitride crystal including: a step of adding at least one or more of a nitride of an alkali metal or an alkaline earth metal and a transition metal to metal gallium and iron nitride and performing heating in a nitrogen atmosphere to at least a reaction temperature at which the metal gallium reacts.

公开(公告)号：US20190271097A1

公开(公告)日：2019-09-05

申请号：US16289864

申请日：2019-03-01

Applicant: DEXERIALS CORPORATION

Inventor： Kazuhiro YAGIHASHI ,  Shinya AKIYAMA

IPC: C30B29/40 ,  C30B19/12 ,  H01L29/20 ,  H01L21/02

Abstract: There is provided a semiconductor substrate including: a sapphire substrate; an intermediate layer formed of gallium nitride with random crystal directions and provided on the sapphire substrate; and at least one or more semiconductor layers each of which is formed of a gallium nitride single crystal and that are provided on the intermediate layer.

公开(公告)号：US20190218684A1

公开(公告)日：2019-07-18

申请号：US16324691

申请日：2017-09-06

Applicant: DEXERIALS CORPORATION

Inventor： Makoto WATANABE ,  Shinya AKIYAMA

IPC: C30B19/04 ,  C30B29/40 ,  H01L21/02

CPC classification number: C30B19/04 ,  C30B29/38 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02625 ,  H01L21/208

Abstract: There is provided a new and improved method for producing a gallium nitride stacked body that can produce a single-crystal layer with few crystal defects, the method including: an intermediate layer formation step of forming an intermediate layer (12) of gallium nitride with random crystal orientations on a substrate (11); and a single-crystal layer formation step of forming a single-crystal layer (13) of gallium nitride on the intermediate layer (12) by a liquid phase epitaxial growth method. Also the intermediate layer (12) may be formed by a liquid phase epitaxial growth method.