公开(公告)号：US09275860B2

公开(公告)日：2016-03-01

申请号：US14258416

申请日：2014-04-22

Applicant: Electronics and Telecommunications Research Institute

Inventor： Young Jun Yu ,  Jin Soo Kim ,  Hong Kyw Choi ,  Jin Sik Choi ,  Jin Tae Kim ,  Kwang Hyo Chung ,  Doo Hyeb Youn ,  Choon Gi Choi

IPC: H01L21/00 ,  H01L21/02 ,  H01L29/778 ,  H01L29/24

CPC classification number: H01L21/02628 ,  B82Y10/00 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02568 ,  H01L21/0259 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/778

Abstract: A method of manufacturing a junction electronic device having a 2-Dimensional (2D) material as a channel, includes forming a pattern portion by surface-treating a substrate so that the patterned portion has a higher surface potential than other portions of the substrate; bonding a 2D material to rthe patterned portion having the higher surface potential by spraying a liquid including 2D material flakes onto the substrate; forming a pair of first electrodes in contact with both ends of the 2D material disposed on the substrate; forming a dielectric layer on the first electrodes and the 2D material; and forming a second electrode on the dielectric layer. The 2D materials are disposed at desired positions by chemical exfoliation.

Abstract translation: 制造具有二维（2D）材料作为通道的结电子器件的方法包括通过对衬底进行表面处理形成图形部分，使得图案化部分具有比衬底的其它部分更高的表面电位; 通过将包括2D材料薄片的液体喷涂到基底上，将2D材料结合到具有较高表面电位的图案化部分; 形成与设置在所述基板上的所述2D材料的两端接触的一对第一电极; 在所述第一电极和所述2D材料上形成介电层; 以及在所述电介质层上形成第二电极。 通过化学剥离将2D材料设置在期望的位置。

公开(公告)号：US09586826B2

公开(公告)日：2017-03-07

申请号：US14314153

申请日：2014-06-25

Applicant: Electronics and Telecommunications Research Institute

Inventor： Jin Sik Choi ,  Hong Kyw Choi ,  Ki Chul Kim ,  Young Jun Yu ,  Jin Soo Kim ,  Choon Gi Choi

IPC: C01B31/04 ,  H01L21/04

CPC classification number: C01B31/0453 ,  C01B32/186 ,  H01L21/0425 ,  Y10T428/24802 ,  Y10T428/24851

Abstract: Disclosed are a method of growing a high-quality single layer graphene by using a Cu/Ni multi-layer metallic catalyst, and a graphene device using the same. The method controls and grows a high-quality single layer graphene by using the Cu/Ni multilayer metallic catalyst, in which a thickness of a nickel lower layer is fixed and a thickness of a copper upper layer is changed in a case where a graphene is grown by a CVD method. According to the method, it is possible to obtain a high-quality single layer graphene, and improve performance of a graphene application device by utilizing the high-quality single layer graphene and thus highly contribute to industrialization of the graphene application device.

Abstract translation: 公开了通过使用Cu / Ni多层金属催化剂生长高质量单层石墨烯的方法和使用其的石墨烯装置。 该方法通过使用Cu / Ni多层金属催化剂来控制和生长高质量的单层石墨烯，其中在下列情况下，固定有镍下层的厚度和铜上层的厚度，在石墨烯为 通过CVD法生长。 根据该方法，可以通过利用高品质的单层石墨烯来获得高品质的单层石墨烯，并提高石墨烯应用装置的性能，从而对石墨烯应用装置的工业化起到非常重要的作用。