公开(公告)号：US20170126115A1

公开(公告)日：2017-05-04

申请号：US15011364

申请日：2016-01-29

Applicant: Faraday&Future Inc.

Inventor： Steven E. Schulz ,  David Tang ,  Silva Hiti ,  Hector Romo ,  Marc Haeberlin

IPC: H02M1/32 ,  H02M7/5387 ,  B60L11/18

CPC classification number: H02M1/32 ,  B60L3/003 ,  B60L3/0038 ,  B60L11/1803 ,  B60L2210/40 ,  B60L2240/80 ,  H02M7/53871 ,  H02M2001/0009 ,  H03K17/0828 ,  H03K2017/0806

Abstract: Circuits and methods for driving a load are disclosed. An exemplary driving circuit may include first and second switching devices electrically connected with each other in parallel. The driving circuit may also include a current sensing circuit configured to generate a current sensing signal indicating a value of a current flowing through the first switching device. The current sensing signal may include an offset caused by parasitic inductance imbalance in electrical connections connecting the first and second switching devices. The driving circuit may further include a driver circuit configured to control switching operations of the first and second switching devices. The driver circuit may include an overcurrent protection circuit electrically connected to the current sensing circuit. In addition, the driving circuit may include a current sensing signal correction circuit configured to reduce the offset in the current sensing signal received by the overcurrent protection circuit during a switching transient period.

公开(公告)号：US09912225B2

公开(公告)日：2018-03-06

申请号：US15011364

申请日：2016-01-29

Applicant: Faraday & Future Inc.

Inventor： Steven E. Schulz ,  David Tang ,  Silva Hiti ,  Hector Romo ,  Marc Haeberlin

IPC: H02M1/32 ,  H02M7/538 ,  B60L11/18 ,  H02M7/5387 ,  H03K17/082 ,  H02M1/00 ,  H03K17/08

CPC classification number: H02M1/32 ,  B60L3/003 ,  B60L3/0038 ,  B60L11/1803 ,  B60L2210/40 ,  B60L2240/80 ,  H02M7/53871 ,  H02M2001/0009 ,  H03K17/0828 ,  H03K2017/0806

Abstract: Circuits and methods for driving a load are disclosed. An exemplary driving circuit may include first and second switching devices electrically connected with each other in parallel. The driving circuit may also include a current sensing circuit configured to generate a current sensing signal indicating a value of a current flowing through the first switching device. The current sensing signal may include an offset caused by parasitic inductance imbalance in electrical connections connecting the first and second switching devices. The driving circuit may further include a driver circuit configured to control switching operations of the first and second switching devices. The driver circuit may include an overcurrent protection circuit electrically connected to the current sensing circuit. In addition, the driving circuit may include a current sensing signal correction circuit configured to reduce the offset in the current sensing signal received by the overcurrent protection circuit during a switching transient period.

公开(公告)号：US09762146B2

公开(公告)日：2017-09-12

申请号：US14929173

申请日：2015-10-30

Applicant: Faraday&Future Inc.

Inventor： Steven E. Schulz ,  David Tang ,  Silva Hiti

IPC: G05F1/569 ,  H02M7/5387 ,  H02M7/537

CPC classification number: H02M7/537 ,  H02M7/493 ,  H03K17/0828 ,  H03K2017/0806

Abstract: A system for interconnecting parallel insulated gate bipolar transistor (IGBT) modules is provided. A pair of switches selected from a plurality of the IGBT modules are assigned to a driver integrated circuit (IC). In the pair of switches, a master IGBT switch is selected, the other switch being a slave IGBT switch. A command signal from the driver IC is electrically coupled to both the master and slave IGBT switches. The master and slave IGBT switches both have protective circuits; however, the driver IC is electrically coupled to the protective circuits of the selected master IGBT switch only. The protective circuits include temperature and current sense circuits. The plurality of the IGBT modules may be formed by two hexpack power modules. The modules are configured such that only a single driver IC is needed for each pair of parallel IGBT switches, with equal current sharing of the paralleled modules.

公开(公告)号：US20170126145A1

公开(公告)日：2017-05-04

申请号：US14929173

申请日：2015-10-30

Applicant: Faraday&Future Inc.

Inventor： Steven E. Schulz ,  David Tang ,  Silva Hiti

IPC: H02M7/537

CPC classification number: H02M7/537 ,  H02M7/493 ,  H03K17/0828 ,  H03K2017/0806

Abstract: A system for interconnecting parallel insulated gate bipolar transistor (IGBT) modules is provided. A pair of switches selected from a plurality of the IGBT modules are assigned to a driver integrated circuit (IC). In the pair of switches, a master IGBT switch is selected, the other switch being a slave IGBT switch. A command signal from the driver IC is electrically coupled to both the master and slave IGBT switches. The master and slave IGBT switches both have protective circuits; however, the driver IC is electrically coupled to the protective circuits of the selected master IGBT switch only. The protective circuits include temperature and current sense circuits. The plurality of the IGBT modules may be formed by two hexpack power modules. The modules are configured such that only a single driver IC is needed for each pair of parallel IGBT switches, with equal current sharing of the paralleled modules.