公开(公告)号：US20140094025A1

公开(公告)日：2014-04-03

申请号：US13630231

申请日：2012-09-28

Applicant: GENERAL ELECTRIC COMPANY

Inventor： Bastiaan Arie Korevaar ,  Faisal Razi Ahmad

IPC: H01L21/225

CPC classification number: H01L31/1828 ,  H01L21/02422 ,  H01L21/02472 ,  H01L21/02474 ,  H01L21/02483 ,  H01L21/02505 ,  H01L21/02562 ,  H01L21/02614 ,  H01L31/0322 ,  H01L31/073 ,  Y02E10/541 ,  Y02E10/543

Abstract: A method for processing a semiconductor assembly is presented. The method includes: (a) contacting at least a portion of a semiconductor assembly with a chalcogen source, wherein the semiconductor assembly comprises a semiconductor layer comprising a semiconductor material disposed on a support; (b) introducing a chalcogen from the chalcogen source into at least a portion of the semiconductor material; and (c) disposing a window layer on the semiconductor layer after the step (b).

Abstract translation: 提出了一种处理半导体组件的方法。 该方法包括：（a）使半导体组件的至少一部分与硫属元素源接触，其中半导体组件包括半导体层，该半导体层包括设置在支撑体上的半导体材料; （b）将硫属元素从硫族元素源引入到半导体材料的至少一部分中; 和（c）在步骤（b）之后在半导体层上设置窗口层。

公开(公告)号：US20130233374A1

公开(公告)日：2013-09-12

申请号：US13866132

申请日：2013-04-19

Applicant: GENERAL ELECTRIC COMPANY

Inventor： Bastiaan Arie Korevaar ,  James Neil Johnson ,  Holly Ann Blaydes ,  James Edward Pickett ,  Thomas Miebach

IPC: H01L31/05 ,  H01L31/18

CPC classification number: H01L31/0516 ,  H01L31/02 ,  H01L31/0322 ,  H01L31/03925 ,  H01L31/03926 ,  H01L31/046 ,  H01L31/0749 ,  H01L31/1828 ,  Y02E10/541 ,  Y02E10/543 ,  Y02P70/521

Abstract: A monolithically integrated cadmium telluride (CdTe) photovoltaic (PV) module includes a first electrically conductive layer and an insulating layer. The first electrically conductive layer is disposed below the insulating layer. The PV module further includes a back contact metal layer and a CdTe absorber layer. The back contact metal layer is disposed between the insulating layer and the CdTe absorber layer. The PV module further includes a window layer and a second electrically conductive layer. The window layer is disposed between the CdTe absorber layer and the second electrically conductive layer. At least one first trench extends through the back contact metal layer, at least one second trench extends through the absorber and window layers, and at least one third trench extends through the second electrically conductive layer. A method for monolithically integrating CdTe PV cells is also provided.

Abstract translation: 单片集成碲化镉（CdTe）光伏（PV）模块包括第一导电层和绝缘层。 第一导电层设置在绝缘层的下方。 PV模块还包括背接触金属层和CdTe吸收层。 背接触金属层设置在绝缘层和CdTe吸收层之间。 PV模块还包括窗口层和第二导电层。 窗口层设置在CdTe吸收层和第二导电层之间。 至少一个第一沟槽延伸穿过背接触金属层，至少一个第二沟槽延伸穿过吸收体和窗口层，并且至少一个第三沟槽延伸穿过第二导电层。 还提供了一种用于单片集成CdTe PV电池的方法。