Photodetection device
    3.
    发明授权

    公开(公告)号:US12066580B2

    公开(公告)日:2024-08-20

    申请号:US17802930

    申请日:2021-02-01

    摘要: A photodetection device includes a substrate and a plurality of pixel units. The plurality of pixel units includes a pixel unit including a first photodetector in an active area, and a pixel unit including a second photodetector in an inactive area. The first photodetector includes a first lower electrode layer, a first lower extrinsic semiconductor layer, a first intrinsic semiconductor layer, a first upper extrinsic semiconductor layer, and a first upper electrode layer. The second photodetector includes a second lower electrode layer, a second lower extrinsic semiconductor layer, a second intrinsic semiconductor layer, a second upper extrinsic semiconductor layer, and a second upper electrode layer. The second lower electrode layer is covered with the second lower extrinsic semiconductor layer and the second intrinsic semiconductor layer.