公开(公告)号：US09230863B2

公开(公告)日：2016-01-05

申请号：US14177854

申请日：2014-02-11

Applicant: GLOBALFOUNDRIES, Inc.

Inventor： Jialin Yu ,  Huang Liu ,  Jilin Xia ,  Girish Bohra

IPC: H01L21/4763 ,  H01L21/8234 ,  H01L29/66

CPC classification number: H01L21/823437 ,  H01L21/823456 ,  H01L21/823475 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545

Abstract: Integrated circuits with tungsten components having a smooth surface and methods for producing such integrated circuits are provided. A method of producing the integrated circuits includes forming a nucleation layer overlying a substrate and within a cavity, where the nucleation layer includes tungsten. A nucleation layer thickness is reduced, and a fill layer if formed overlying the nucleation layer.

Abstract translation: 提供具有光滑表面的钨成分的集成电路以及用于制造这种集成电路的方法。 一种制造集成电路的方法包括形成层叠在基底上的成核层，并且其中成核层包含钨。 成核层厚度减小，填充层如果形成在成核层上方。

公开(公告)号：US20150228543A1

公开(公告)日：2015-08-13

申请号：US14177854

申请日：2014-02-11

Applicant: GLOBALFOUNDRIES, Inc.

Inventor： Jialin Yu ,  Huang Liu ,  Jilin Xia ,  Girish Bohra

IPC: H01L21/8234 ,  H01L29/66

CPC classification number: H01L21/823437 ,  H01L21/823456 ,  H01L21/823475 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545

Abstract: Integrated circuits with tungsten components having a smooth surface and methods for producing such integrated circuits are provided. A method of producing the integrated circuits includes forming a nucleation layer overlying a substrate and within a cavity, where the nucleation layer includes tungsten. A nucleation layer thickness is reduced, and a fill layer if formed overlying the nucleation layer.

Abstract translation: 提供具有光滑表面的钨成分的集成电路以及用于制造这种集成电路的方法。 一种制造集成电路的方法包括形成层叠在基底上的成核层，并且其中成核层包含钨。 成核层厚度减小，填充层如果形成在成核层上方。