Semiconductor substrates and methods for processing semiconductor substrates
    1.
    发明授权
    Semiconductor substrates and methods for processing semiconductor substrates 有权
    半导体衬底和半导体衬底的处理方法

    公开(公告)号:US09570291B2

    公开(公告)日:2017-02-14

    申请号:US14798796

    申请日:2015-07-14

    Abstract: Semiconductor substrates and methods for processing semiconductor substrates are provided. A method for processing a semiconductor substrate includes providing a semiconductor substrate having an outer edge, a central region, and a peripheral region between the outer edge and the central region. The semiconductor substrate also has an upper surface. The method includes forming an amorphous material over the upper surface of the semiconductor substrate in the peripheral region. Also, the method includes irradiating the upper surface of the semiconductor substrate, wherein the amorphous material inhibits cracking at the outer edge of the semiconductor substrate.

    Abstract translation: 提供半导体衬底和半导体衬底的处理方法。 一种用于处理半导体衬底的方法包括提供在外边缘和中心区域之间具有外边缘,中心区域和周边区域的半导体衬底。 半导体衬底也具有上表面。 该方法包括在周边区域的半导体衬底的上表面上形成无定形材料。 此外,该方法包括照射半导体衬底的上表面,其中非晶态材料抑制在半导体衬底的外边缘处的裂纹。

    SEMICONDUCTOR SUBSTRATES AND METHODS FOR PROCESSING SEMICONDUCTOR SUBSTRATES
    2.
    发明申请
    SEMICONDUCTOR SUBSTRATES AND METHODS FOR PROCESSING SEMICONDUCTOR SUBSTRATES 有权
    半导体衬底和半导体衬底的处理方法

    公开(公告)号:US20170018426A1

    公开(公告)日:2017-01-19

    申请号:US14798796

    申请日:2015-07-14

    Abstract: Semiconductor substrates and methods for fabricating integrated circuits are provided. A method for fabricating an integrated circuit includes providing a semiconductor substrate having an outer edge, a central region, and a peripheral region between the outer edge and the central region. The semiconductor substrate also has an upper surface. The method includes forming an amorphous material over the upper surface of the semiconductor substrate in the peripheral region. Also, the method includes irradiating the upper surface of the semiconductor substrate, wherein the amorphous material inhibits cracking at the outer edge of the semiconductor substrate.

    Abstract translation: 提供半导体基板和用于制造集成电路的方法。 一种用于制造集成电路的方法包括提供在外边缘和中心区域之间具有外边缘,中心区域和周边区域的半导体基板。 半导体衬底也具有上表面。 该方法包括在周边区域的半导体衬底的上表面上形成无定形材料。 此外,该方法包括照射半导体衬底的上表面,其中非晶态材料抑制在半导体衬底的外边缘处的裂纹。

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