公开(公告)号：US20180261456A1

公开(公告)日：2018-09-13

申请号：US15456757

申请日：2017-03-13

Applicant: GLOBALFOUNDRIES INC.

Inventor： Heng YANG ,  Ahmed HASSAN ,  Daniel DECHENE

IPC: H01L21/033 ,  H01L21/768

CPC classification number: H01L21/0337 ,  H01L21/32139 ,  H01L21/76816 ,  H01L21/76837 ,  H01L21/76885 ,  H01L29/66545

Abstract: A single critical mask process flow and associated structure eliminate the formation of narrow polysilicon defects at the ends of polysilicon gate arrays, and obviate the need to implement complicated ground rules and post-design fill methods to avoid generation of the defects.