公开(公告)号：US20190341448A1

公开(公告)日：2019-11-07

申请号：US15968968

申请日：2018-05-02

Applicant: GLOBALFOUNDRIES INC.

Inventor： Emilie M.S. Bourjot ,  Julien Frougier ,  Yi Qi ,  Ruilong Xie ,  Hui Zang ,  Hsien-Ching Lo ,  Zhenyu Hu

IPC: H01L29/06 ,  H01L29/417 ,  H01L29/78 ,  H01L21/285 ,  H01L29/66 ,  H01L29/08

Abstract: Various aspects of the disclosure include nanosheet-FET structures having a wrap-all-around contact where the contact wraps entirely around the S/D epitaxy structure, not just on the top and sides of the S/D epitaxy structure, thereby increasing contact area and ultimately allowing for improved S/D contact resistance. Other aspects of the disclosure include nanosheet-FET structures having a bottom isolation to reduce parasitic S/D leakage to the substrate.