公开(公告)号：US09236271B2

公开(公告)日：2016-01-12

申请号：US13749330

申请日：2013-01-24

Applicant: GLOBALFOUNDRIES INC.

Inventor： Can Bayram ,  Stephen W. Bedell ,  Devendra K. Sadana ,  Katherine L. Saenger

IPC: H01L21/30 ,  H01L21/46 ,  H01L21/428 ,  H01L21/18 ,  H01L33/00 ,  H01L21/683

CPC classification number: H01L21/428 ,  H01L21/18 ,  H01L21/185 ,  H01L21/6835 ,  H01L21/6836 ,  H01L33/0079 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2221/68386

Abstract: A pulsed laser-initiated exfoliation method for patterning a Group III-nitride film on a growth substrate is provided. This method includes providing a Group III-nitride film a growth substrate, wherein a growth substrate/Group III-nitride film interface is present between the Group III-nitride film and the growth substrate. Next, a laser is selected that provides radiation at a wavelength at which the Group III-nitride film is transparent and the growth substrate is absorbing. The interface is then irradiated with pulsed laser radiation from the Group III-nitride film side of the growth substrate/Group III-nitride film interface to exfoliate a region of the Group III-nitride from the growth substrate. A method for transfer a Group-III nitride film from a growth substrate to a handle substrate is also provided.

Abstract translation: 提供了用于在生长衬底上图案化III族氮化物膜的脉冲激光起始剥离方法。 该方法包括提供III族氮化物膜生长衬底，其中在III族氮化物膜和生长衬底之间存在生长衬底/ III族氮化物膜界面。 接下来，选择提供在III族氮化物膜透明并且生长衬底吸收的波长处的辐射的激光。 然后用生长衬底/ III族氮化物膜界面的III族氮化物膜侧的脉冲激光辐射照射该界面，以从生长衬底剥离III族氮化物的区域。 还提供了将III族氮化物膜从生长衬底转移到手柄衬底的方法。

公开(公告)号：US10043923B2

公开(公告)日：2018-08-07

申请号：US14691124

申请日：2015-04-20

Applicant: GLOBALFOUNDRIES INC.

Inventor： Deborah A. Neumayer ,  Katherine L. Saenger

IPC: H01L31/00 ,  H01L31/0224 ,  H01L31/068 ,  H01L31/0747 ,  H01L31/18 ,  H01L21/02 ,  H01L21/225 ,  H01L21/268 ,  H01L21/768

Abstract: Techniques and structures for laser doping of crystalline semiconductors using a dopant-containing amorphous silicon stack for dopant source and passivation are provided. An example method includes forming a dopant-containing amorphous silicon layer stack on at least one portion of a surface of a crystalline semiconductor layer; and irradiating a selected area of the dopant-containing amorphous silicon layer stack, wherein the selected area of the dopant-containing amorphous silicon layer stack interacts with an upper portion of the underlying crystalline semiconductor layer to form a doped, conductive crystalline region, and each non-selected area of the dopant-containing amorphous silicon layer stack remains intact on the at least one portion of the surface of the crystalline semiconductor layer.