公开(公告)号：US20190019880A1

公开(公告)日：2019-01-17

申请号：US15649227

申请日：2017-07-13

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Seong Yeol MUN ,  Kwan-Yong LIM ,  Kijik LEE

IPC: H01L29/66 ,  H01L21/28 ,  H01L21/02 ,  H01L29/78 ,  H01L29/49 ,  H01L29/51

Abstract: A method of forming a 14 nm triple gate by adding a MG in the dual gate process and the resulting device are provided. Embodiments include forming an EG region, a MG region and a SG region in a first, second and third portions of a Si substrate, respectively; forming an IL over the EG, MG and SG regions; oxidizing the IL; forming a HK dielectric layer over the IL; performing PDA on the HK dielectric layer; forming a PSA TiN layer over the HK dielectric layer; forming an a-Si cap layer over the PSA TiN layer; forming a photoresist over the a-Si cap layer in the EG and SG regions; removing the a-Si cap layer in the MG region, exposing the PSA TiN layer; stripping the photoresist; and annealing the a-Si cap and PSA TiN layers.

公开(公告)号：US20150318280A1

公开(公告)日：2015-11-05

申请号：US14266278

申请日：2014-04-30

Applicant: GLOBALFOUNDRIES INC.

Inventor： Seong Yeol MUN ,  Bumhwan JEON ,  Kijik LEE

IPC: H01L27/088 ,  H01L21/768 ,  H01L29/66 ,  H01L21/285 ,  H01L29/417 ,  H01L21/8234 ,  H01L21/3213

CPC classification number: H01L21/76897 ,  H01L21/28518 ,  H01L21/32133 ,  H01L21/823431 ,  H01L21/823475 ,  H01L27/0886 ,  H01L29/41783 ,  H01L29/41791 ,  H01L29/665 ,  H01L29/66795

Abstract: A wide-bottom contact to epitaxial structures in a non-planar semiconductor structure is provided. A starting structure includes a non-planar semiconductor structure, the structure including a semiconductor substrate, fins coupled to the substrate, and epitaxial structures (e.g., diamond-shaped silicon epitaxy) on the fins. Trenches to the epitaxial structures with roughly vertical sidewalls are created from a field oxide and photoresist. Silicide is formed on the epitaxial structures, and bottom contact portions (of metal, e.g., tungsten) are conformally created on the silicide. The vertical sidewalls allow for a wider bottom. Contact bodies are then formed on the bottom contact portions.

Abstract translation: 提供了一种与非平面半导体结构中的外延结构的宽底部接触。 起始结构包括非平面半导体结构，该结构包括半导体衬底，耦合到该衬底的鳍片，以及翅片上的外延结构（例如，菱形硅外延）。 对于具有大致垂直侧壁的外延结构的沟槽由场氧化物和光致抗蚀剂产生。 在外延结构上形成硅化物，并且在硅化物上共形地形成金属（例如钨）的底部接触部分。 垂直侧壁允许更宽的底部。 然后在底部接触部分上形成接触体。