公开(公告)号：US10727251B2

公开(公告)日：2020-07-28

申请号：US16207730

申请日：2018-12-03

Applicant: GLOBALFOUNDRIES INC.

Inventor： Stefan Dünkel ,  Johannes Müller ,  Lars Müller-Meskamp

IPC: G11C11/22 ,  G11C5/12 ,  H01L21/28 ,  H01L27/1159 ,  H01L29/423 ,  H01L29/10 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L21/3105 ,  H01L21/3213 ,  H01L21/027 ,  H01L21/762 ,  H01L21/3065 ,  G11C11/16

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to rounded shaped transistors and methods of manufacture. The structure includes a gate structure composed of a metal electrode and a rounded ferroelectric material which overlaps an active area in a width direction into an isolation region.