公开(公告)号：US09437717B2

公开(公告)日：2016-09-06

申请号：US13971982

申请日：2013-08-21

Applicant: GLOBALFOUNDRIES INC.

Inventor： Kevin K. Chan ,  Peng Cheng ,  Qizhi Liu ,  Ljubo Radic

IPC: H01L29/73 ,  H01L29/66 ,  H01L29/737 ,  H01L29/10 ,  G06F17/50

CPC classification number: H01L29/73 ,  G06F17/5045 ,  H01L29/1004 ,  H01L29/66272 ,  H01L29/7371

Abstract: Methods of fabricating bipolar junction transistors, bipolar junction transistors, and design structures for a bipolar junction transistor. A first portion of the intrinsic base layer is masked while a second portion of an intrinsic base layer is etched. As a consequence of the masking, the second portion of the intrinsic base layer is thinner than the first portion of the intrinsic base layer. An emitter and an extrinsic base layer are formed in respective contacting relationships with the first and second portions of the intrinsic base layer.