公开(公告)号：US20180138203A1

公开(公告)日：2018-05-17

申请号：US15354205

申请日：2016-11-17

Applicant: GLOBALFOUNDRIES INC.

Inventor： Hui ZANG ,  Min-Hwa CHI

IPC: H01L27/12 ,  H01L29/10 ,  H01L29/06 ,  H01L23/535 ,  H01L21/84

CPC classification number: H01L27/1203 ,  H01L21/823878 ,  H01L29/1087 ,  H01L29/4983 ,  H01L29/78 ,  H01L29/78648

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to self-aligned back-plane and well contacts for a fully depleted silicon on insulator device and methods of manufacture. The structure includes a back-plane, a p-well and an n-well formed within a bulk substrate; a contact extending from each of the back-plane, the p-well and the n-well; a gate structure formed above the back-plane, the p-well and the n-well; and an insulating spacer isolating the contact of the back-plane from the gate structure.

公开(公告)号：US20150187947A1

公开(公告)日：2015-07-02

申请号：US14656649

申请日：2015-03-12

Applicant: GLOBALFOUNDRIES INC.

Inventor： Min-Hwa CHI ,  Hoong Shing WONG

IPC: H01L29/78 ,  H01L29/22 ,  H01L29/20

CPC classification number: H01L29/7853 ,  H01L29/20 ,  H01L29/22 ,  H01L29/66795 ,  H01L29/785

Abstract: A semiconductor structure in fabrication includes a n-FinFET and p-FinFET. Stress inducing materials such as silicon and silicon germanium are epitaxially grown into naturally diamond-shaped structures atop the silicon fins of the n-FinFET and p-FinFET areas. The diamond structures act as the source, drain and channel between the source and drain. The diamond structures of the channel are selectively separated from the fin while retaining the fin connections of the diamond-shaped growth of the source and the drain. Further fabrication to complete the structure may then proceed.

Abstract translation: 制造中的半导体结构包括n-FinFET和p-FinFET。 诸如硅和硅锗的应力诱导材料在n-FinFET和p-FinFET区域的硅散热片的顶部外延生长成天然的菱形结构。 金刚石结构作为源极和漏极之间的源极，漏极和沟道。 通道的金刚石结构与翅片选择性分离，同时保持源极和漏极的菱形生长的翅片连接。 可以进一步完成结构的制造。