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公开(公告)号：US10818494B2
公开(公告)日：2020-10-27
申请号：US16125066
申请日：2018-09-07
Applicant: GLOBALFOUNDRIES INC.
Inventor： Hsueh-Chung Chen , Ravi P. Srivastava , Somnath Ghosh , Nicholas V. Licausi , Terry A. Spooner , Sean Reidy
IPC: B32B3/00 , H01L21/033
Abstract: The present disclosure relates to a structure which includes a first metal layer patterned as a mandrel, a dielectric spacer on the first metal layer, and a second metal layer on the dielectric spacer.
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