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公开(公告)号:US20200159270A1
公开(公告)日:2020-05-21
申请号:US16196183
申请日:2018-11-20
Applicant: GLOBALFOUNDRIES INC.
Inventor: Ulrich G. Hensel , Jurgen Faul , Arif A. Siddiqi
IPC: G05F3/16
Abstract: Embodiments of the present disclosure provide a circuit structure including: a first tap node, a first operational element coupled to the first tap node, the first operational element including at least one transistor having a back-gate, a second tap node coupled to the first operational unit, a second operational element coupled to the second tap node, the second operational element including at least one transistor having a back-gate, and a first back-gate biasing voltage regulator coupled to the second operational element and the first tap node. The first back-gate biasing voltage regulator is configured to supply the at least one transistor of the second operational element with a back-gate biasing voltage level that is different than a voltage level available to the second operational element from the second tap node.
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公开(公告)号:US10775826B2
公开(公告)日:2020-09-15
申请号:US16196183
申请日:2018-11-20
Applicant: GLOBALFOUNDRIES INC.
Inventor: Ulrich G. Hensel , Jurgen Faul , Arif A. Siddiqi
IPC: G05F3/16
Abstract: Embodiments of the present disclosure provide a circuit structure including: a first tap node, a first operational element coupled to the first tap node, the first operational element including at least one transistor having a back-gate, a second tap node coupled to the first operational unit, a second operational element coupled to the second tap node, the second operational element including at least one transistor having a back-gate, and a first back-gate biasing voltage regulator coupled to the second operational element and the first tap node. The first back-gate biasing voltage regulator is configured to supply the at least one transistor of the second operational element with a back-gate biasing voltage level that is different than a voltage level available to the second operational element from the second tap node.
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