VOLTAGE DIVIDER TOPOLOGY CIRCUIT STRUCTURE
    1.
    发明申请

    公开(公告)号:US20200159270A1

    公开(公告)日:2020-05-21

    申请号:US16196183

    申请日:2018-11-20

    Abstract: Embodiments of the present disclosure provide a circuit structure including: a first tap node, a first operational element coupled to the first tap node, the first operational element including at least one transistor having a back-gate, a second tap node coupled to the first operational unit, a second operational element coupled to the second tap node, the second operational element including at least one transistor having a back-gate, and a first back-gate biasing voltage regulator coupled to the second operational element and the first tap node. The first back-gate biasing voltage regulator is configured to supply the at least one transistor of the second operational element with a back-gate biasing voltage level that is different than a voltage level available to the second operational element from the second tap node.

    Back-gate biasing voltage divider topology circuit structure

    公开(公告)号:US10775826B2

    公开(公告)日:2020-09-15

    申请号:US16196183

    申请日:2018-11-20

    Abstract: Embodiments of the present disclosure provide a circuit structure including: a first tap node, a first operational element coupled to the first tap node, the first operational element including at least one transistor having a back-gate, a second tap node coupled to the first operational unit, a second operational element coupled to the second tap node, the second operational element including at least one transistor having a back-gate, and a first back-gate biasing voltage regulator coupled to the second operational element and the first tap node. The first back-gate biasing voltage regulator is configured to supply the at least one transistor of the second operational element with a back-gate biasing voltage level that is different than a voltage level available to the second operational element from the second tap node.

Patent Agency Ranking