公开(公告)号：US20180248001A1

公开(公告)日：2018-08-30

申请号：US15443276

申请日：2017-02-27

Applicant: GLOBALFOUNDRIES INC.

Inventor： Anthony K. STAMPER ,  Vincent J. MCGAHAY ,  Zhong-Xiang HE

IPC: H01L29/06 ,  H01L23/31 ,  H01L23/528

CPC classification number: H01L29/0619 ,  H01L23/3171 ,  H01L23/528 ,  H01L29/0649

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to segmented guard-ring and chip edge seals and methods of manufacture. The structure includes: a guard ring structure formed in a low-k dielectric material; and an edge seal structure formed through the low-k dielectric material to at least a substrate underneath the low-k dielectric material.

公开(公告)号：US20190074253A1

公开(公告)日：2019-03-07

申请号：US15698027

申请日：2017-09-07

Applicant: GLOBALFOUNDRIES INC.

Inventor： Vincent J. MCGAHAY ,  Nicholas A. POLOMOFF ,  Shaoning YAO ,  Anupam ARORA

IPC: H01L23/00 ,  H01L23/62 ,  H01L23/66

CPC classification number: H01L23/562 ,  H01L23/585 ,  H01L23/62 ,  H01L23/66 ,  H01L2223/6605

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to arc resistant crackstop structures and methods of manufacture. The structure includes: a crackstop structure comprising dual rails surrounding an active area of an integrated circuit; and a through-BOx electrical contact electrically connecting each of the dual rails to an underlying substrate.