公开(公告)号：US20210134716A1

公开(公告)日：2021-05-06

申请号：US17118876

申请日：2020-12-11

Applicant: GLOBALFOUNDRIES INC.

Inventor： Anthony K. STAMPER ,  Daisy A. VAUGHN ,  Stephen R. BOSLEY ,  Zhong-Xiang HE

IPC: H01L23/522 ,  H01L27/08 ,  H01L49/02 ,  H01G4/33 ,  H01G4/08 ,  H01G4/232 ,  H01L23/528

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to tight pitch wirings and capacitors and methods of manufacture. The structure includes: a capacitor including: a bottom plate of a first conductive material; an insulator material on the bottom plate; and a top plate of a second conductive material on the insulator material; and a plurality of wirings on a same level as the bottom plate and composed of the second conductive material.

公开(公告)号：US20200243439A1

公开(公告)日：2020-07-30

申请号：US16256595

申请日：2019-01-24

Applicant: GLOBALFOUNDRIES INC.

Inventor： Anthony K. STAMPER ,  Daisy A. VAUGHN ,  Stephen R. BOSLEY ,  Zhong-Xiang HE

IPC: H01L23/522 ,  H01L27/08 ,  H01L49/02 ,  H01L23/528 ,  H01G4/08 ,  H01G4/232 ,  H01G4/33

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to tight pitch wirings and capacitors and methods of manufacture. The structure includes: a capacitor including: a bottom plate of a first conductive material; an insulator material on the bottom plate; and a top plate of a second conductive material on the insulator material; and a plurality of wirings on a same level as the bottom plate and composed of the second conductive material.

公开(公告)号：US20180248001A1

公开(公告)日：2018-08-30

申请号：US15443276

申请日：2017-02-27

Applicant: GLOBALFOUNDRIES INC.

Inventor： Anthony K. STAMPER ,  Vincent J. MCGAHAY ,  Zhong-Xiang HE

IPC: H01L29/06 ,  H01L23/31 ,  H01L23/528

CPC classification number: H01L29/0619 ,  H01L23/3171 ,  H01L23/528 ,  H01L29/0649

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to segmented guard-ring and chip edge seals and methods of manufacture. The structure includes: a guard ring structure formed in a low-k dielectric material; and an edge seal structure formed through the low-k dielectric material to at least a substrate underneath the low-k dielectric material.