公开(公告)号：US20170229362A1

公开(公告)日：2017-08-10

申请号：US15017004

申请日：2016-02-05

Applicant: GLOBALFOUNDRIES INC.

Inventor： John A. Fitzsimmons ,  Michael J. Shapiro ,  Natalia Borjemscaia ,  Vincent McGahay

IPC: H01L23/26 ,  H01L23/535 ,  H01L23/00 ,  H01L23/31

CPC classification number: H01L23/26 ,  H01L23/3142 ,  H01L23/535 ,  H01L23/562 ,  H01L23/564 ,  H01L23/585 ,  H01L2924/3025 ,  H01L2924/3512

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to corrosion resistant chip sidewall connections with crackstop structures with a hermetic seal, and methods of manufacture. The structure includes: a guard ring structure surrounding an active region of an integrated circuit chip; an opening formed in the guard ring structure; and a hermetic seal encapsulating the opening and a portion of the guard ring structure, the hermetic seal being structured to prevent moisture ingress to the active region of the integrated circuit chip through the opening.

公开(公告)号：US09852959B2

公开(公告)日：2017-12-26

申请号：US15017004

申请日：2016-02-05

Applicant: GLOBALFOUNDRIES INC.

Inventor： John A. Fitzsimmons ,  Michael J. Shapiro ,  Natalia Borjemscaia ,  Vincent McGahay

IPC: H01L23/26 ,  H01L23/535 ,  H01L23/00 ,  H01L23/31

CPC classification number: H01L23/26 ,  H01L23/3142 ,  H01L23/535 ,  H01L23/562 ,  H01L23/564 ,  H01L23/585 ,  H01L2924/3025 ,  H01L2924/3512

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to corrosion resistant chip sidewall connections with crackstop structures with a hermetic seal, and methods of manufacture. The structure includes: a guard ring structure surrounding an active region of an integrated circuit chip; an opening formed in the guard ring structure; and a hermetic seal encapsulating the opening and a portion of the guard ring structure, the hermetic seal being structured to prevent moisture ingress to the active region of the integrated circuit chip through the opening.