公开(公告)号：US20150236133A1

公开(公告)日：2015-08-20

申请号：US14181790

申请日：2014-02-17

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Jagar SINGH ,  Andy WEI ,  Gopal SRINIVASAN ,  Amaury GENDRON

IPC: H01L29/66 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/306 ,  H01L29/78 ,  H01L27/088

CPC classification number: H01L29/66795 ,  H01L21/3086 ,  H01L27/0629 ,  H01L29/785 ,  H01L29/94

Abstract: Devices and methods for forming semiconductor devices with wider FinFETs for higher tunability of the varactor are provided. One method includes, for instance: obtaining an intermediate semiconductor device; applying a spacer layer over the semiconductor device; etching the semiconductor device to remove at least a portion of the spacer layer to expose the plurality of mandrels; removing the mandrels; etching the semiconductor device to remove a portion of the dielectric layer; forming at least one fin; and removing the spacer layer and the dielectric layer. One intermediate semiconductor device includes, for instance: a substrate; a dielectric layer over the substrate; a plurality of mandrels formed on the dielectric layer, the mandrels including a first set of mandrels and a second set of mandrels, wherein the first set of mandrels have a width twice as large as the second set of mandrels; and a spacer layer applied over the mandrels.

Abstract translation: 提供了用于形成具有更宽FinFET的半导体器件以用于变容二极管的较高可调性的装置和方法。 一种方法包括，例如：获得中间半导体器件; 在所述半导体器件上施加间隔层; 蚀刻半导体器件以去除间隔层的至少一部分以暴露多个心轴; 去除心轴; 蚀刻半导体器件以去除电介质层的一部分; 形成至少一个翅片; 以及去除间隔层和电介质层。 一个中间半导体器件包括例如：衬底; 介电层; 形成在所述电介质层上的多个心轴，所述心轴包括第一组心轴和第二组心轴，其中所述第一组心轴的宽度是所述第二组心轴的两倍; 以及施加在心轴上的间隔层。